A substantial improvement in magnetoresistance by Cu doping at Mn sites of La2/3Ca1/3MnO3
S.L Yuan,Y.P Yang,Z.C Xia,G Peng,G.H Zhang,J Tang,J Liu,L.J Zhang,Q.H Zhong,S Liu,L Chen,W Feng,Z.Y Li,L Liu,G.Q Zhang,F Tu,C.S Xiong
DOI: https://doi.org/10.1016/S0038-1098(02)00229-6
IF: 1.934
2002-01-01
Solid State Communications
Abstract:It is reported here that the colossal magnetoresistance can be realized at low magnetic fields by doping at the Mn site of La2/3Ca1/3MnO3 with a small amount of Cu. Defining magnetoresistance by MR0≡Δρ/ρ(H=0), MR0 near the insulator–metal transition is found to increase from ∼3 to ∼90% with x from 0 to 4% for a low field ∼0.5T. We also show that the intergrain magnetoresistance can be largely improved through this doping.