Abstract:This article presents a wideband millimeter-wave power amplifier (PA) with a capacitive stability enhancement technique. It is composed of three differential cascode stages to attain high-power gain and large output power. To ensure the stabilization of the amplifier, a robust technique based on a series base capacitor is proposed and applied in each stage. Each capacitor creates a low-frequency zero to adjust the phase and amplitude responses of the differential cascode structure. As a result, the phase margin of the loop gain is increased remarkably. By adjusting the series base capacitors, the low-frequency zeros and gains of the three stages can be optimized. Therefore, the operating bandwidth is also extended. Meanwhile, a transformer-based four-path power combination network with a large current capacity is developed to further enlarge the output power. The circuit is demonstrated in a commercial 0.13 μm SiGe BiCMOS process. According to the measurement results, the PA obtains a saturated output power (P Sat ) of 18.5 dBm and output referred 1-dB compression point (OP 1dB ) of 16.32 dBm at 77 GHz. The tested small-signal gain is 26.7 dB at 77 GHz. Its 3 dB gain bandwidth is beyond 21.5 GHz, which ranges from 68.5 to 90 GHz. The P Sat variation is less than 0.57 dB at the frequency range from 70 to 85 GHz. The measurement also shows the PA with the proposed technique is unconditionally stable over the entire frequency band. The chip area is only 0.684 mm 2 .

A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13- $\mu\text{m}$ Technology

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

Two-Way Current-Combining -Band Power Amplifier in 65-nm CMOS

Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS

Design and Analysis of a 26–34.5-Ghz Power Amplifier with Balanced Mismatch Reduction and Interstage Matching

A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

Design of X/Ku Dual-Wideband GaN Power Amplifier MMIC Based on Coupled Multiresonator Matching Networks

A C Band Fully-integrated SiGe BiCMOS Power Amplifier

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A 6.3 Dbm 258-314 GHz Power Amplifier Using a Broadband 8-Way SQWL Power Combiner in 130-Nm SiGe BiCMOS Technology

A 60-Ghz CMOS Balanced Power Amplifier with Miniaturized Quadrature Hybrids Achieving 19.0-Dbm Output Power and 24.4% Peak PAE

A 140- and 220-Ghz Dual-Band Amplifier in 130-Nm SiGe BiCMOS Process

A K-/Ka-Band 21.4 dBm Power Amplifier with Four-Way Twisted Combiner in <tex>$0.13\ \mu\mathrm{m}$</tex> SiGe BiCMOS

A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process

A 206-264 GHz Power Amplifier Based on a High-Linearity Cascode Core With 15 dB Gain and 12.2-dBm P sat in 130-nm SiGe BiCMOS

A Two-Way Current-Combining W-band Power Amplifier Achieving 17.4-Dbm Output Power with 19.4% PAE in 65-Nm Bulk CMOS

A Dual-Band High-Efficiency Power Amplifier in 65-Nm CMOS Technology

A Compact E-Band Load-Modulation Balanced Power Amplifier Using Coupled Transmission-Line Output Network Achieving 22.1-Dbm Psat and 34.9%/12.2% Efficiency at Psat/6-dB PBO

A 32.9% PAE, 15.3 Dbm, 21.6–41.6 GHz Power Amplifier in 65nm CMOS Using Coupled Resonators