Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

Spin-photon interaction in a nanowire quantum dot with asymmetrical confining potential

Spin-photon interaction in a nanowire quantum dot with asymmetrical confining potential

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Anisotropic Exchange Coupling in A Nanowire Double Quantum Dot with Strong Spin-Orbit Coupling

Su-Schrieffer-Heeger model:Interplay of spin-orbit and Zeeman interactions

Spin Dynamics in InAs Nanowire Quantum Dots Coupled to a Transmission Line

The impacts of the quantum-dot confining potential on the spin-orbit effect

An Exactly Solvable Model for a Strongly Spin-Orbit-coupled Nanowire Quantum Dot

Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires

Control of the Two-Electron Exchange Interaction in a Nanowire Double Quantum Dot

Determination of the spin-orbit coupling in a nanowire via electric-dipole spin resonance

Entanglement of Spin-Orbit Qubits Induced by Coulomb Interaction

Two Electrons with Spin-Orbit Interactions in InAs Coupled Quantum Dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots

Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Strong Coupling Of A Spin Qubit To A Superconducting Stripline Cavity