Abstract:Although the family of polycrystalline Cu2ZnSn(S,Se)4 (CZTSSe) thin films are well-known light absorber materials for photovoltaic solar cells and have been studied extensively in the past, the behaviors of their grain boundary (GB) still remain elusive. By using a combination of experimental techniques, we have systematically investigated the compositions and electronic structures of the grain interior (GI) and GB of the polycrystalline CZTS, CZTSe and CZTSSe films at nanometer scales. In particular, we have for the first time independently determined the band edge positions for both the conduction band and the valence band using scanning tunneling spectroscopy. While the composition of GB was nearly the same as that of GI for both CZTS and CZTSe films, opposite band bending behaviors near GBs were discovered for them. For CZTS, both the conduction band and valence band were found to bend towards the forbidden gap near GBs, resulting in enhanced carrier recombination and relatively poor device performance. For CZTSe, in contrast, both the conduction band and valence band were found to bend away from the forbidden gap near GBs, which could be responsible for the relative better device performance due to the potentially impeded carrier recombination. In the case of CZTSSe thin film, by actively substituting Se with S near GBs, both conduction band and valence band at GBs were demonstrated to bend away from the forbidden gap, leading in principle to a lower carrier recombination at GBs and improved device performance. Our findings could provide a direction for manipulating the band bending between GB and GI to improve the performance of CZTSSe family solar cells.

Nanoscopic study of the compositions, structures, and electronic properties of grain boundaries in Cu(InGa)Se2 photovoltaic thin films

Physics of Grain Boundaries in Polycrystalline Photovoltaic Semiconductors

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Defect Segregation at Grain Boundary and Its Impact on Photovoltaic Performance of CuInSe2

Enhancement of Hole Barrier and Light Absorption in the {112} Surface of CuIn0.5Ga0.5Se2Solar Cell

Band bending near grain boundaries of Cu 2 ZnSn(S,Se) 4 thin films and its effect on photovoltaic performance

Atom-Scale Chemistry in Chalcopyrite-Based Photovoltaic Materials Visualized by Atom Probe Tomography.

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

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Revealing Surface Modifications of Caesium Indium Selenium Treated Cu-rich Cu(In,Ga)Se2: A Study of the Suppression of the Interfacial Recombination

Carrier transportation in polycrystalline CuInSe2 thin films with Cu-deficient grain boundaries

Microstructural and Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se 2 Films

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

Microstructural Characterization of Cu-poor Cu (in, Ga)Se2 Surface Layer

Microstructure Characterization of the Soda-Lime-glass/copper–indium–gallium–selenium Interface in Cu-poor Cu(In,Ga)Se2 Thin Films

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

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Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments

Tuning Band Alignment at Grain Boundaries for Efficiency Enhancement in Cu2ZnSnS4 Solar Cells.