The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 Nm Size Range

Jeongmin Hong,Ali Hadjikhani,Mark Stone,Frances I. Allen,Vladimir Safonov,Ping Liang,Jeffrey Bokor,Sakhrat Khizroev
DOI: https://doi.org/10.1109/tmag.2016.2530622
IF: 1.848
2016-01-01
IEEE Transactions on Magnetics
Abstract:The spin-transfer torque magnetic tunneling junction (MTJ) technology may pave a way to a universal memory paradigm. MTJ devices with perpendicular magnetic anisotropy have the potential to have high thermal stability, high tunneling magnetoresistance, and low critical current for energy-efficient current-induced magnetization switching. Using devices fabricated through focused ion beam etching with Ga- and Ne-ion beams, this paper aimed to understand the size dependence of the current/voltage characteristics in the sub-10 nm range. The switching current density drastically dropped around 1 MA/cm(2) as the device size was reduced below 10 nm. A stability of over 22 kT measured for a 5 nm device indicated a significantly reduced spin relaxation time.
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