Abstract:In this paper, 45 GHz and 60 GHz power amplifiers (PAs) with high output power have been successfully designed by using 90 nm CMOS process. The 45 GHz (60 GHz) PA consists of two (four) differential stages. The sizes of transistors have been designed in an appropriate way so as to trade-off gain, efficiency and stability. Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional III-V technologies, the technique of power combining has been applied to achieve a high output power. In particular, a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA. The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly. Taking its advantages of this novel transformer based power combiner, our realized 45 GHz (60 GHz) mm-wave PA has achieved the gain of 20.3 dB (16.8 dB), the maximum PAE of 14.5% (13.4%) and the saturated output power of 21 dBm (21 dBm) with the 1.2 V supply voltage.

Fully-integrated Linear CMOS Power Amplifier with Proportional Series Combining Transformer for S-Band Applications.

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

Two-Way Current-Combining -Band Power Amplifier in 65-nm CMOS

Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS

High-efficiency CMOS Power Amplifier with a Folded Proportional Combining Structure and Adaptive Power Mode Control

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A35.2 Dbm CMOS RF Power Amplifier Using an 8-Way Current-Voltage Combining Transformer with Harmonic Control

A Highly Linear Fully Integrated CMOS Power Amplifier with an Analog Predistortion Technique

Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers

A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer

A Compact Broadband Transformer‐based Linear CMOS Power Amplifier Design

45-Ghz and 60-Ghz 90 Nm CMOS Power Amplifiers with a Fully Symmetrical 8-Way Transformer Power Combiner.

A Compact 144% Fractional Bandwidth CMOS Power Amplifier With an Optimization of Synthesized High-Order Matching Network.

A 21.6dbm CMOS Power Amplifier Using a Compact High-K Output Transformer for X-band Application

On-chip Power-Combining Techniques for Watt-Level Linear Power Amplifiers in 0.18 Μm CMOS

A 0.2–2.5 GHz CMOS Power Amplifier Using Transformer-Based Broadband Matching Network

A 60 GHz 14 Dbm Power Amplifier with a Transformer-Based Power Combiner in 65 Nm CMOS

A +33dBm 1.9 GHz linear CMOS power amplifier with MOS-level linearizers

An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS

A Compact Transformer-Based E-Band CMOS Power Amplifier with Enhanced Efficiencies of 15.6% PAE<sub>1dB</sub> and 6.5% PAE at 6 dB Power Back-Off

A 17-dBm E-Band Power Amplifier with Two-Way Combiner in 65 nm CMOS Technology