Medium Voltage Solid State Transformers Based on 15 Kv SiC MOSFET and JBS Diode.

Alex Q. Huang,Li Wang,Qi Tian,Qianlai Zhu,Dong Chen,Wensong Yu
DOI: https://doi.org/10.1109/iecon.2016.7793121
2016-01-01
Abstract:This paper discusses the advancements in the development of the medium voltage solid state transformer (SST) based on 15 kV SiC MOSFET and JBS diode. Designed for 7.2 kV single phase distribution grid applications, the medium voltage SST converts high voltage AC to low voltage 240/120V ac. The use of ultra-high voltage SiC devices allows the simplification of the power conversion circuit topology. This paper presents the characteristics of the high voltage SiC MOSFET devices as well as the topology innovations to achieve ultra-efficient SST design. Specifically, three different designs are discussed which utilize three-stage, two-stage and single stage power conversion topologies to achieve the AC to AC conversion.
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