Abstract:Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM offers high density with low per-byte fabrication cost. However, despite many advantages, such as scalability and low leakage, the energy for programming intermediate states is considerably larger than programing single-level cell PCM. In this paper, we study encoding techniques to reduce write energy for MLC PCM when the encoding granularity is lowered below the typical cache line size. We observe that encoding data blocks at small granularity to reduce write energy actually increases the write energy because of the auxiliary encoding bits. We mitigate this adverse effect by 1) designing suitable codeword mappings that use fewer auxiliary bits and 2) proposing a new Word-Level Compression (WLC) which compresses more than 91% of the memory lines and provides enough room to store the auxiliary data using a novel restricted coset encoding applied at small data block granularities. Experimental results show that the proposed encoding at 16-bit data granularity reduces the write energy by 39%, on average, versus the leading encoding approach for write energy reduction. Furthermore, it improves endurance by 20% and is more reliable than the leading approach. Hardware synthesis evaluation shows that the proposed encoding can be implemented on-chip with only a nominal area overhead.

Energy Optimization for Multi-Level Cell Non-Volatile Memory Using State Remapping

Energy-efficient Multi-Level Cell Phase-Change Memory System with Data Encoding.

Phase Based And Application Based Dynamic Encoding Scheme For Multi-Level Cell Stt-Ram

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Improving energy efficiency of write-asymmetric memories by log style write.

Access scheme of Multi-Level Cell Spin-Transfer Torque Random Access Memory and its optimization

Utilizing PCM for Energy Optimization in Embedded Systems

Energy Saving Techniques for Phase Change Memory (PCM)

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

Exploiting Page Write Pattern for Power Management of Hybrid Dram/Pram Memory System

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

A Hybrid Main Memory Architecture Design for Reducing DRAM System Refresh Power

Nonvolatile Multistates Memories for High-Density Data Storage

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

MigrantStore: Leveraging Virtual Memory in DRAM-PCM Memory Architecture

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Enabling Fine-Grain Restricted Coset Coding Through Word-Level Compression for PCM

Exploit Imbalanced Cell Writes to Mitigate Write Disturbance in Dense Phase Change Memory

Memory That Never Forgets: Emerging Nonvolatile Memory and the Implication for Architecture Design

Design Methodologies for Reliable and Energy-efficient PCM Systems