Abstract:Organic–inorganic perovskite solar cells (PSCs), which have good environmental durability, are of great interest for practical applications. In this work, we show that a solution-processed MoOx layer acts as a buffer layer against high moisture stress to suppress defects in the perovskite and as a hole transport layer. The inversion of the photoinduced charge migration behaviors, that is, the electron preferentially moving toward the surface when MoOx is directly deposited onto the perovskite, is found to cause a significant loss in device functionality. The deposition of MoOx onto spiro-OMeTAD results in a lower photocurrent density–voltage (J–V) hysteresis behavior, a greatly enhanced electrical conductivity, and a significantly stabilized power conversion efficiency (PCE) when compared with those of devices without the MoOx layer. More importantly, the PCEs of the MoOx-based devices are retained at over 85% of their initial value, while only 75% is retained for a reference cell. This work highlights the facial fabrication approach of the solution-based MoOx layer and provides experimental evidence of the photogenerated charge migration behaviors on the perovskite/MoOx interface. This information would be beneficial for the further design and development of PSC technology.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c02963?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c02963</a>.XRD data of MoOx with annealing treatment at 150 and 425 °C and perovskite after exposure to moisture for various periods; magnified XRD signals of fresh perovskite and MoOx/perovskite as a function of the grazing angle; top-view SEM images of the perovskite capped with MoOx at various MoOx concentrations and of 0.02 M MoOx prepared on the spiro/perovskite/SnO2 sample; cross-sectional SEM image of the MoOx/perovskite layer and AFM film thickness of 0.02 M MoOx coated on the glass slide; determination of an optical band gap (Eg) and Urbach tail energy (Eu) of the perovskite deposited with MoOx; steady-state PL spectra of the spiro/perovskite sample having MoOx and SnO2 with different MoOx concentrations; XPS spectra of Mo 3d and O 1s of 0.02 M MoOx/perovskite after exposure to 1 sun for different periods; device parameters: short-circuit current (Jsc), open-circuit potential (Voc), and FF of the device with and without MoOx as a function of aging time; and J–V curves of the device consisting of Ag/spiro-OMeTAD/MoOx/perovskite/SnO2/FTO-coated glass (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c02963/suppl_file/ae0c02963_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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