Abstract:In this work, it is successfully introduced that periodic strain precisely into monolayer MoS2 by direct growth on nano‐patterned sapphire substrates (NPSS), providing a novel and effective method for substrate‐induced thermal compressive strain. Moreover, based on the nano‐patterned MoS2, high‐performance photodetectors are achieved with the highest detectivity and fastest response speed ever reported in the photoconductive devices based on MoS2. The extraordinary mechanical compliance of 2D molybdenum disulfide (MoS2) makes it an ideal candidate for strain modulation of various electrical and optical properties. However, developing facile methods for accurate and stable engineering of strain still remains a major challenge. Here, a novel and effective method is demonstrated for introducing periodic strain into monolayer MoS2 by direct growth on nano‐patterned sapphire substrates (NPSS). A mixed aqueous solution of Na2MoO4 and NaOH is spin‐coated on the NPSS and sulfurated in one step by chemical vapor deposition (CVD). Highly oriented monolayer MoS2 single‐crystal nanosheets with high quality and few sulfur vacancies are achieved conformally on the NPSS via a liquid‐mediated growth mode. Notably, the periodically distributed blue shift of the PL emission peak demonstrated periodic compressive strain is introduced into the nano‐patterned MoS2 via the thermal expansion difference between MoS2 and substrates. Furthermore, photodetectors fabricated using the nano‐patterned monolayer MoS2 exhibit a high photo‐to‐dark current ratio (PDCR) over 106, an excellent detectivity of 5.4 × 1013 Jones, and a fast photoresponse of 7.7 ms, owing to the strain‐induced back‐to‐back built‐in electric field, enhanced light absorption by light‐scattering effect and fewer S vacancy defects. The scanning imaging demonstration based on the single‐pixel nano‐patterned MoS2 photodetector further confirms its great potential in image sensors. This work hereby presents a pathway for direct conformal growth of nano‐patterned monolayer MoS2 with precisely periodic strain, which should inspire the applications for high‐performance optoelectronic devices via the strategy of patterned substrate engineering by the periodic nanostructures.

Thermally Strained Band Gap Engineering of Transition Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors.

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Self-Powered Sb2Te3/MoS2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared

Self-powered Broadband Photodetector on Flexible Substrate from Visible to Near Infrared Wavelength

Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2

Observation of Robust Charge Transfer under Strain Engineering in Two-Dimensional MoS2-WSe2 Heterostructures

Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Transfer-Free Growth of Atomically Thin Transition Metal Disulfides Using a Solution Precursor by a Laser Irradiation Process and Their Application in Low-Power Photodetectors

Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.

Conformal Growth of Nano‐Patterned Monolayer MoS2 with Periodic Strain via Patterned Substrate Engineering for High‐performance Photodetectors

Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures.

Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure

Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium‐Assisted CVD Strategy

Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Tunable Optoelectronic Properties of WS$_2$ by Local Strain Engineering and Folding

Synchronous Enhancement for Responsivity and Response Speed in In2Se3 Photodetector Modulated by Piezoresistive Effect.

Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS 2

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure