Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Schottky Barrier and Band Edge Engineering Via the Interfacial Structure and Strain for the Pt/TiO2 Heterostructure.

Interface Schottky barrier engineering via strain in metal-semiconductor composites.

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

Evolution of the SrTiO3-MoO3 Interface Electronic Structure: an in Situ Photoelectron Spectroscopy Study.

A First-Principles Study of Band Structure Modulation at TiO2 Heterogeneous Interfaces

Studies Of Two Distinct Types Of (Ba,Sr)Tio3/Pt Interfaces

Theoretical insights for Improving the Schottky-barrier Height at the Ga$_2$O$_3$/Pt Interface

Atomic-Scale Distribution and Evolution of Strain in Pt Nanoparticles Grown on MoS2 Nanosheet

The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Enhancing the Photocatalytic Hydrogen Evolution Performance of a Metal/Semiconductor Catalyst Through Modulation of the Schottky Barrier Height by Controlling the Orientation of the Interface.

The Role of Interfacial Morphology in Cu2O/TiO2 and Band Bending: Insights from Density Functional Theory

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles

Water effect on band edges of anatase TiO 2 surfaces: Theoretical study on charge migration across surface heterojunctions and facet-dependent photoactivity

Modulating the Schottky barrier of Pt/PbTiO3 for efficient piezo-photocatalytic hydrogen evolution

Interfacial charge transfer and interaction in the MXene/TiO2 heterostructures

Nanostructure and charge transfer in Bi2S3-TiO2 heterostructures.

Band Alignment of Tin/Hfo2 Interface of Tin/Hfo2/Sio2/Si Stack

Pbtio3/Srtio3 Interface: Energy Band Alignment and Its Relation to the Limits of Fermi Level Variation

Electronic Structure Tuning and Interface Charge Transfer in Hybrid Graphene/Titania and Adatom/Graphene/Titania: First Principles Calculations

Directly Probing Charge Separation at Interface of TiO2 Phase Junction

Investigation of energy band alignments and interfacial properties of rutile NMO2/TiO2 (NM = Ru, Rh, Os, and Ir) by first-principles calculations