Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Towards a Comprehensive Understanding of the Reaction Mechanisms Between Defective MoS 2 and Thiol Molecules.

Large Lattice Mismatch of Nanocomposite Coating: In-situ Establishment of MoS2 by Precursor and Desulfurization Reaction

Defect Engineering of Two-dimensional Molybdenum Disulfide

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

An atomic-scale perspective on individual thiol-terminated molecules anchored to single S vacancies in MoS$_2$

Chemical and Electronic Repair Mechanism of Sulfur Defects in MoS$_2$ Monolayers

Electrochemical catalysis and corrosion of defective MoS2: Microscopic behaviors and density-functional-theory calculations

Unraveling States, Energetics, and Kinetics of Adsorbing Oxygen Species above MoS2

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Spectroscopic Investigation of Defects Mediated Oxidization of Single-Layer MoS2

Defect-tailored MoS 2 for superior Fenton-like catalysis: The synergistic reactive sites of 1T phase and sulfur vacancy in electron transfer and radical generation

The defect is perfect: MoS2/TiO2 modified with unsaturated Mo vacancies to construct Z-scheme heterojunction & improve mobility of e-

Atomic Observation of Filling Vacancies in Monolayer Transition Metal Sulfides by Chemically Sourced Sulfur Atoms

Synthesis of Ultrahigh‐Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules

S Defect-rich MoS2: Differences of S Point-defects and S Stripping-defects in Photocatalysis

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Defects, band bending and ionization rings in MoS2

Intercalation‐Driven Defect‐Engineering of MoS2for Catalytic Transfer Hydrogenation

Optimization of Defects in Large-Area Synthetic MoS2 Thin Films by CS2 Treatment for Switching and Sensing Devices

Clicking Beyond Suspensions. Understanding Thiol-ene Chemistry on Solid-Supported MoS2