Influence of Annealing Temperature on the Phase Composition and Optical Properties of CuInS2 Films
Yue Zhao,Xiang Peng,Yanli Ding,Xiaoyan Liang,Jiahua Min,Linjun Wang,Weimin Shi
DOI: https://doi.org/10.1016/j.mssp.2013.03.015
IF: 4.1
2013-01-01
Materials Science in Semiconductor Processing
Abstract:We studied the growth of CuInS 2 thin films by single-source evaporation of CuInS 2 powder in a high-vacuum system with a base pressure of 10 −3 Pa. After evaporation, the films were annealed in a sulfur atmosphere at temperatures from 200 to 500 °C for 1 h. XRD curves and Raman spectra of the films demonstrated that chalcopyrite CuInS 2 was the major crystalline phase. The morphology of Cu x S exhibited a star-like structure, which we report for the first time. The phase composition and optical properties of our polycrystalline thin films were effectively modified by annealing in S. For films annealed at 200 and 350 °C, a secondary CuIn 11 S 17 phase appeared, which may be related to solid-state reaction in the S atmosphere. This secondary CuIn 11 S 17 phase has not been widely reported in previous studies. After annealing at 500 °C, only a chalcopyrite phase was detected, with bandgap energy of 1.46 eV, which is nearly identical to the optimal bandgap energy (1.5 eV) of single-crystal CuInS 2 . This indicates that the composition of the CuInS 2 film annealed at 500 °C was nearly stoichiometric. The bandgap of the samples first increased and then decreased with increasing annealing temperature, which may be attributed to an increase in grain size, the secondary CuIn 11 S 17 phase, and deviation from stoichiometry.