The Effects of Group-I Elements Co-Doping with Mn in ZnO Dilute Magnetic Semiconductor
Liqiang Zhang,Yinzhu Zhang,Zhizhen Ye,Jianguo Lu,Bin Lu,Bo He
DOI: https://doi.org/10.1063/1.4729530
IF: 2.877
2012-01-01
Journal of Applied Physics
Abstract:Mn-Li codoped ZnO (Zn(Mn,Li)O), Mn-Na codoped ZnO (Zn(Mn,Na)O), and Mn-K codoped ZnO (Zn(Mn,K)O) thin films were deposited on quartz substrates by pulsed laser deposition. The doping effects of group-I elements (e.g., Li, Na, and K) on the structural, magnetic, and optical properties of the Mn doped ZnO (ZnMnO) films were discussed. X-ray diffraction and K-edge x-ray absorption near-edge structure measurements revealed that all the films showed a hexagonal wurtzite ZnO structure, and no other clusters, precipitates, or second phases were detected. Zn(Mn,Na)O and Zn(Mn,Li)O films showed a weak p-type conductivity, while the Zn(Mn,K)O film appeared a highly resistivity. The saturation magnetization of Zn(Mn,Na)O and Zn(Mn,Li)O films was 1.2 and 0.18 μB/Mn, respectively. The hole-related defects, induced by doping with a low content of Li or Na, contributed to the room temperature ferromagnetism in the ZnMnO system.