Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere
Xiao-Ying Zhang,Jing Han,Yao-Tian Wang,Yu-Jiao Ruan,Wan-Yu Wu,Dong-Sing Wuu,Juan Zuo,Feng-Min Lai,Shui-Yang Lien,Wen-Zhang Zhu
DOI: https://doi.org/10.1016/j.solmat.2023.112384
IF: 6.9
2023-05-20
Solar Energy Materials and Solar Cells
Abstract:Hafnium oxide (HfO 2 ) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO 2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N 2 ) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Q f ) and density of interface traps (D it ) between HfO 2 and c-Si were extracted. Q f and D it reveal the potential of HfO 2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO 2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO 2 thin films are systematically studied. The results show that N 2 -annealed sample possesses the highest Q f of 1.73 × 10 12 cm −2 and therefore provides the best field effect passivation. Air-annealed sample has lowest D it of 1.0 × 10 12 eV −1 cm −2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 10 15 cm −3 , which means that good passivation was obtained for N-type Si wafer passivated with HfO 2 after annealing in Air.
materials science, multidisciplinary,physics, applied,energy & fuels