Abstract:Dilute magnetic semiconductors(DMSs), such as MnGaAs, MnCdTe, CoZnO, and FeZnO, offer the great opportunity to integrate the magnetic, electrical, and optical advantages into a single semiconductor material. Therefore, DMSs attract more and more interests for the application in spintronics field. However, incorporation of transition metal ions will inevitably effects on the optical and electrical properties when the magnet functionalities are introduced into semiconductors. Besides the quenching behavior in fluorescence due to the complex energy level system, the effect of transition metal ions on conduction of the matrix is not neglectable because of the alterable valence. In present work, we found that doping of Fe ions changes the conduction type of the CdS thin films form n-to p-type. The Fe related donor-acceptor pairs emission was discussed by photoluminescence (PL) characterization. Cd1-xFexS thin films with different Fe contents were grown on c-plane sapphire substrate by low-pressure metal organic chemical vapor deposition. Dimethyl cadmium, iron pentacarbonyl and H2S were used as precursors, flow rates of which were fixed at 3.51×10-6, 3.77× 10-7 and 1.62×10-5 mol/min by separate mass-flow controllers, respectively. High purity hydrogen (99.999%) was used as carrier gas with total flow rate of 1.9 liter/min. The growth was performed for 30 min, and the thickness of samples ranges from 500 to 700 nm. A Lake Shore 7707 Hall measurement system was employed to measure the electrical properties of the thin films. PL measurements were performed on a JY-630 micro-Raman spectrometer in a backscattering geometry configuration. The excitation source for the PL is the 325 nm line of a He-Cd laser. The Fe contents in samples A, B, C, D, and E are 0.002 5, 0.007 2, 0.014 9, 0.045 5, and 0.140 0, respectively, which were measured by energy dispersion spectroscopy. The resistivity of the thin films was found to increase with the addition of more Fe contents into the Cd1-xFexS thin films, and eventually the conductivity of Cd1-xFexS thin film reverses from n-to p-type at high density Fe doping. Because the samples were Cd-rich, the acceptors can be only offered by Fe ions doped into the CdS films. The p-type conduction was attributed to the ionization of holes from trivalent Fe ions, which was formed by the oxidation of Fe2+ ion near the sample surface. With increasing Fe content, the band-to-band transition at 2.5 eV was suppressed while the emission located at 2.0~2.4 eV finally dominated the PL spectra. Under various excitation density, the PL emission located at 2.0~2.4 eV shows significant evolvement. The intensity of high-energy side of this emission increases more rapidly than that of the low-energy side with increasing excitation density. Therefore, the emission at 2.0~2.4 eV was attributed to donor-acceptor pairs. According to the PL peak position and carrier density obtained by electrical measurement, the energy level of Fe acceptor was calculated to be about 320 meV by using the formula.

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