Abstract:Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles less than 1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior work. Using conductive atomic force microscopy (CAFM), we show that the stacking orientation of the two TMD crystals has a profound impact on the atomic reconstruction, consistent with recent theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental work on graphene bilayers and hBN/graphene vdWH. Transmission electron microscopy (TEM) provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provides fundamental insight into the behavior of this important class of heterostructures.

Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

High resolution imaging of reconstructed domains and moire patterns in functional van der Waals heterostructure devices

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Tuning the Electronic Structure of Monolayer Graphene/mos2van Der Waals Heterostructures Via Interlayer Twist

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

Interfacial Interactions in Van Der Waals Heterostructures of MoS2 and Graphene

Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure

Lattice Mismatch Driven Small Angle Moiré Twists in Epitaxially‐Grown 2D Vertical Layered Heterostructures

Determination of Interatomic Coupling Between Two-Dimensional Crystals Using Angle-Resolved Photoemission Spectroscopy

In situ twistronics of van der Waals heterostructures

Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures

Convergent beam electron holography for analysis of van der Waals heterostructures

Moiré Metrology of Energy Landscapes in Van Der Waals Heterostructures

A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials