Abstract:Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XNYi dimer defects (X, Y = C, N, P, and Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XNYi dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XNYi defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers' spin to range from 1.79 GHz (SiNPi0) to 29.5 GHz (CNNi0). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c16988.Table S1: results of numerical convergence tests of the QET-ED calculations; Figure S1: atomic structure and electronic structure of the low-spin (S = 0) CNCi– defect; Figure S2: charge density (wavefunction squared) associated with the a and e defect orbitals of the XNYi dimers; Table S2: computed total energy difference between the spin-triplet (S = 1) and spin-singlet (S = 0) states of the XNYi defects at the PBE and HSE levels of theory; Figure S3: defect formation energy of six XNYi dimer defects in h-BN in the nitrogen-poor and nitrogen-rich conditions, calculated at the PBE level of theory; Table S3: computed binding energy gain of the spin-triplet XNYi dimers at the PBE level of theory; Figure S4: ground-state and excited-state structures of the spin-triplet XNYi dimer defects computed by using the QE code at the PBE level of theory; Figure S5: many-electron multiplet structures of the XNYi dimers at the ground-state (left diagram) and excited-state geometries computed by using the QET-ED theory; Table S4: computed zero-phonon line (ZPL) and Huang–Rhys (HR) factor of the XNYi dimers in h-BN for the 3A2–3E transition at the PBE level of theory; Note S1: comparison of the VASP and QE results for the ZPL energies and the HR factors; Figure S6: ground-state and excited-state structures of the spin-triplet XNYi dimer defects computed by using the VASP code at the HSE level of theory; Table S5: computed anisotropic hyperfine tensors and principal axes of the six XNYi dimers at the PBE level of theory (PDF)This article has not yet been cited by other publications.

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