In Situ Observation of Shear-Driven Amorphization in Silicon Crystals

Yang He,Li Zhong,Feifei Fan,Chongmin Wang,Ting Zhu,Scott X. Mao

DOI: https://doi.org/10.1038/nnano.2016.166

IF: 38.3

2016-01-01

Nature Nanotechnology

Abstract:Silicon nanocrystals under shear stress go through an intermediate, diamond-hexagonal phase before becoming amorphous.

What problem does this paper attempt to address?

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

Yue-Cun Wang,Wei Zhang,Li-Yuan Wang,Zhuo Zhuang,En Ma,Ju Li,Zhi-Wei Shan

DOI: https://doi.org/10.1038/am.2016.92

IF: 10.761

2016-01-01

NPG Asia Materials

Abstract:The mechanism responsible for deformation-induced crystalline-to-amorphous transition (CAT) in silicon is still under considerable debate, owing to the absence of direct experimental evidence. Here we have devised a novel core/shell configuration to impose confinement on the sample to circumvent early cracking during uniaxial compression of submicron-sized Si pillars. This has enabled large plastic deformation and in situ monitoring of the CAT process inside a transmission electron microscope. We demonstrate that diamond cubic Si transforms into amorphous silicon through slip-mediated generation and storage of stacking faults (SFs), without involving any intermediate crystalline phases. By employing density functional theory simulations, we find that energetically unfavorable single-layer SFs create very strong antibonding interactions, which trigger the subsequent structural rearrangements. Our findings thus resolve the interrelationship between plastic deformation and amorphization in silicon, and shed light on the mechanism underlying deformation-induced CAT in general.
TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Yuan Zang,Lianbi Li,Jichao Hu,Lei Li,Zelong Li,Zebin Li,Song Feng,Guoqing Zhang,Caijuan Xia,Hongbin Pu

DOI: https://doi.org/10.3390/ma15207077

IF: 3.4

2022-10-13

Materials

Abstract:Controlling the shape and internal strain of nanowires (NWs) is critical for their safe and reliable use and for the exploration of novel functionalities of nanodevices. In this work, transmission electron microscopy was employed to examine bent Si NWs prepared by asymmetric electron-beam evaporation. The asymmetric deposition of Cr caused the formation of nanosized amorphous-Si domains; the non-crystallinity of the Si NWs was controlled by the bending radius. No other intermediate crystalline phase was present during the crystalline-to-amorphous transition, indicating a direct phase transition from the original crystalline phase to the amorphous phase. Moreover, amorphous microstructures caused by compressive stress, such as amorphous Cr domains and boxes, were also observed in the asymmetric Cr layer used to induce bending, and the local non-crystallinity of Cr was lower than that of Si under the same bending radius.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Byeongyun Jeong,Yidi Shen,Xiaodong Wang,Qi An,Kolan Madhav Reddy

DOI: https://doi.org/10.1016/j.scriptamat.2023.115561

IF: 6.302

2023-01-01

Scripta Materialia

Abstract:Shear amorphization induced by high stress in cubic silicon carbide (β-SiC) has not yet been experimentally observed till-to-date. In this letter, we report the detailed evolution of stress-induced amorphization in superhard β-SiC using transmission electron microscopy (TEM) and molecular dynamics (MD) simulations. From experimental observations using TEM, shearing by stacking faults along (111) crystallographic plane triggers the onset of amorphization. Further, an increase in the stress results in highly localized strains within the amorphous band led by the coalescence of vicinity dislocations. Based on the MD simulations, it has been verified that the existence of stacking faults decreases the amount of shear stress and shear strain necessary to trigger amorphization compared to the pristine β-SiC, which is in line with experimental observations. This study underscores a detailed understanding of the amorphization process in superhard materials through which stress is alleviated in high-stress environments.
Nucleation Mechanisms of Shear Bands in Amorphous Alumina

Qinqin Xu,Meng Liang,Guojian Lyu,Jichao Qiao,Chong Wei,Wenyi Huo,Stefanos Papanikolaou,Claudio Fusco

DOI: https://doi.org/10.1016/j.matchemphys.2024.129783

IF: 4.778

2024-01-01

Materials Chemistry and Physics

Abstract:The origin of the plastic deformation in amorphous solids is a challenging issue unlike that of the plasticity in crystals. Plasticity in amorphous systems can occur by the nucleation and propagation of shear bands (SBs). In this work, we investigate the mechanical response of an amorphous alumina sample subjected to shear deformation via extensive molecular dynamics simulations. We find SBs form only within a certain range of parameter values, e.g., low quenching rates, low temperatures and high strain rates. In our proposed atomic-scale model shear transformation zones (STZs) first nucleate and act as precursors of SBs due to their high stress concentration. The results showed that STZs generate an anti-symmetric stress that is responsible for the vortex-like motion of atoms that facilitate the percolation of STZs, finally forming an SB. These results provide insight into the mechanisms of plastic deformation of similar amorphous solids.
Temperature-Dependent Friction-Induced Surface Amorphization Mechanism of Crystal Silicon

Jie Qin,Yilong Jiang,Shehui Dang,Linmao Qian,Lei Chen,Yang Wang

DOI: https://doi.org/10.1021/acs.langmuir.3c01663

IF: 3.9

2023-09-19

Langmuir

Abstract:Friction-induced surface amorphization of silicon is one of the most important surface wear and damage forms, changing the material properties and harming the reliability of silicon-based devices. However, knowledge regarding the amorphization mechanisms as well as the effects of temperature is still insufficient, because the experimental measurements of the crystal-amorphous interface structures and evolutions are extremely difficult. In this work, we aim to fully reveal the temperature dependence of silicon amorphization behaviors and relevant mechanisms by using reactive molecular dynamics simulations. We first show that the degree of amorphization is suppressed by the increasing temperature, contrary to our initial expectations. Then, we further revealed that the observed silicon amorphization behaviors are attributed to two independent processes: One is a thermoactivated and shear-driven amorphization process where the theoretical amorphization rate shows an interesting valley-like temperature dependence because of the competition between the increased thermal activation effect and the reduction of shear stress, and another one is a thermoactivated recrystallization process which shows a monotonically increasing trend with temperature. Thus, the observed reduction of amorphization with temperature is mainly due to the recrystallization effect. Additionally, analytical models are proposed in this work to describe both the amorphization and the recrystallization processes. Overall, the present findings provide deep insights into the temperature-dependent amorphization and recrystallization processes of silicon, benefiting the further development of silicon-based devices and technologies.
Pressure-induced Amorphization in the Nanoindentation of Single Crystalline Silicon

Jing Han,Song Xu,Jiapeng Sun,Liang Fang,Hua Zhu

DOI: https://doi.org/10.1039/c6ra26094b

IF: 4.036

2017-01-01

RSC Advances

Abstract:Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon.
In situ Observation of Structural Evolution and Phase Engineering of Amorphous Materials during Crystal Nucleation

Xiao Han,Geng Wu,Yiyao Ge,Shaokang Yang,Dewei Rao,Zhiyan Guo,Yan Zhang,Muyu Yan,Haoran Zhang,Lin Gu,Yuen Wu,Yue Lin,Hua Zhang,Xun Hong

DOI: https://doi.org/10.1002/adma.202206994

IF: 29.4

2022-10-14

Advanced Materials

Abstract:The nucleation pathway determines the structures and thus properties of the formed nanomaterials, which is governed by the free energy of the intermediate phase during nucleation. The amorphous structure, as one of the intermediate phases during nucleation, plays an important role in modulating the nucleation pathway. However, the process and mechanism of crystal nucleation from amorphous structures still need to be fully investigated. Here, we employ in situ aberration‐corrected high‐angle annular dark‐field scanning transmission electron microscopy (HAADF‐STEM) to conduct real‐time imaging of the nucleation of ultrathin amorphous nanosheets (NSs). Our results indcate that their nucleation contains three distinct stages, i.e., aggregation of atoms, crystallization to form lattice‐expanded nanocrystals, and relaxation of the lattice‐expanded nanocrystals to form final nanocrystals. In particular, we systematically investigate the crystallization processes of various amorphous materials to form corresponding nanocrystals with unconventional crystalline phases, including face‐centered cubic (fcc) Ru, hexagonal close‐packed (hcp) Rh and a new intermetallic IrCo alloy. In situ electron energy‐loss spectroscopy (EELS) analysis unveils that the doped carbon in the original amorphous NSs can migrate to the surface during the nucleation process, stabilizing the obtained unconventional crystal phases transformed from the amorphous structures, which is also proven by density functional theory (DFT) calculations. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Xinya Wang,Lanh Trinh,Xiaoming Yu,Matthew J. Berg,Sajed Hosseini-Zavareh,Brice Lacroix,Pingping Chen,Ruqi Chen,Bai Cui,Shuting Lei

DOI: https://doi.org/10.2351/7.0001305

IF: 2.1

2024-03-27

Journal of Laser Applications

Abstract:The nature of structural changes of nanosecond laser modification inside silicon is investigated. Raman spectroscopy and transmission electron microscopy measurements of cross sections of the modified channels reveal highly localized crystal deformation. Raman spectroscopy measurements prove the existence of amorphous silicon inside nanosecond laser induced modifications, and the percentage of amorphous silicon is calculated based on the Raman spectrum. For the first time, the high-resolution transmission electron microscopy images directly show the appearance of amorphous silicon inside nanosecond laser induced modifications, which corroborates the indirect measurements from Raman spectroscopy. The laser modified channel consists of a small amount of amorphous silicon embedded in a disturbed crystal structure accompanied by strain. This finding may explain the origin of the positive refractive index change associated with the written channels that may serve as optical waveguides.

materials science, multidisciplinary,optics,physics, applied
Nucleation kinetics and virtual melting in shear-induced structural transitions

Wei Li,Yi Peng,Tim Still,Arjun G Yodh,Yilong Han

DOI: https://doi.org/10.1088/1361-6633/ad99fd

2024-12-05

Reports on Progress in Physics

Abstract:Large shear deformations can induce structural changes within crystals, yet the microscopic kinetics underlying these transformations are difficult for experimental observation and theoretical understanding. Here, we drive shear-induced structural transitions from square lattices to triangular (△) lattices in thin-film colloidal crystals and directly observe the accompanying kinetics with single-particle resolution inside the bulk crystal. When the oscillatory shear strain amplitude 0.1 ≤ γm < 0.4, △-lattice nuclei are surrounded by a liquid layer throughout their growth due to localized shear strain at the interface. Such virtual melting at crystalline interface has been predicted in theory and simulation, but have not been observed in experiment. The mean liquid layer thickness is proportional to the shear which can be explained by the Lindemann melting criterion. This provides an alternative explanation on virtual melting.

physics, multidisciplinary
In-situ TEM observation of preferential amorphization in single crystal Si nanowire

Jiangbin Su,Xianfang Zhu

DOI: https://doi.org/10.1088/1361-6528/aab6eb

2017-12-08

Abstract:The nanoinstability of single crystal Si nanowire under focused electron beam irradiation was in-situ investigated at room temperature by transmission electron microscopy technique. It was observed that the Si nanowire amorphized preferentially from the surface towards the center with the increasing of electron dose. In contrast, in the center of the Si nanowire the amorphization seemed non-uniform and much more difficult accompanying with rotation of crystal grains and compression of d-spacing. Such a selectively preferential amorphization as athermally induced by the electron beam irradiation can be well accounted for by our proposed concepts of nanocurvature effect and energetic beam-induced athermal activation effect, while the classical knock-on mechanism and the electron beam heating effect seem inadequate to explain these processes. Furthermore, the findings revealed the difference of amorphization between Si nanowire and Si film under focused electron beam irradiation. Also, the findings have important implications for nanostability and nanoprocessing of future Si nanowire-based devices.

Mesoscale and Nanoscale Physics
Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Solomon Agbo,Pavol Sutta,Pavel Calta,Rana Biswas,Bicai Pan

DOI: https://doi.org/10.1139/cjp-2013-0442

2014-01-01

Canadian Journal of Physics

Abstract:We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.
Virtual melting and cyclic transformations between amorphous Si, Si I, and Si IV in a shear band

Hao Chen,Valery I. Levitas

2024-05-15

Abstract:Virtual melting (VM) as alternative deformation and stress relaxation mechanisms under extreme load is directly validated by molecular dynamics (MD) simulations of the simple shear of single crystal Si I at a temperature 1,383 K below the melting temperature. The shear band consisting of liquid Si is formed immediately after the shear instability while stress drops to zero. A thermodynamic criterion for VM, which depends on the ratio of the sample to shear band widths, is derived analytically and confirmed by MD simulations. With further shear, the VM immediately transforms to a mixture of low-density amorphous a-Si, Si I, and IV, which undergo cyclic transformations a-Si to and from Si I, a-Si to Si IV, and Si I to and from Si IV with volume fraction of phases mostly between 0.2 and 0.4 and non-repeatable nanostructure evolution. Such cyclic transformations produce additional important carriers for plastic deformation through transformation strain and transformation-induced plasticity due to volume change, which may occur in shear bands in various material systems but missed in experiments and simulations.

Materials Science,Applied Physics
Microstructural Observations of Α-Quartz Amorphization

KJ KINGMA,C MEADE,RJ HEMLEY,HK MAO,DR VEBLEN

DOI: https://doi.org/10.1126/science.259.5095.666

IF: 56.9

1993-01-01

Science

Abstract:Solid-state amorphization is a transformation that has been observed in a growing number of materials. Microscopic observations indicate that amorphization of a-quartz begins with formation of crystallographically controlled planar defects and is followed by growth of amorphous silicon dioxide at these defect sites. Similar transformation microstructures are found in quartz upon quasihydrostatic and nonhydrostatic compression in a diamond-anvil cell to 40 gigapascals and from simple comminution. The results suggest that there is a common mechanism for solid-state amorphization of silicates in static and shock high-pressure experiments, meteorite impact, and deformation by tectonic processes. In general, these results are consistent with recently proposed shear instability models of amorphization.
Microscopic mechanisms of pressure-induced amorphous-amorphous transitions and crystallisation in silicon

Zhao Fan,Hajime Tanaka

DOI: https://doi.org/10.1038/s41467-023-44332-6

IF: 16.6

2024-01-16

Nature Communications

Abstract:Abstract Some low-coordination materials, including water, silica, and silicon, exhibit polyamorphism, having multiple amorphous forms. However, the microscopic mechanism and kinetic pathway of amorphous-amorphous transition (AAT) remain largely unknown. Here, we use a state-of-the-art machine-learning potential and local structural analysis to investigate the microscopic kinetics of AAT in silicon after a rapid pressure change. We find that the transition from low-density-amorphous (LDA) to high-density-amorphous (HDA) occurs through nucleation and growth, resulting in non-spherical interfaces that underscore the mechanical nature of AAT. In contrast, the reverse transition occurs through spinodal decomposition. Further pressurisation transforms LDA into very-high-density amorphous (VHDA), with HDA serving as an intermediate state. Notably, the final amorphous states are inherently unstable, transitioning into crystals. Our findings demonstrate that AAT and crystallisation are driven by joint thermodynamic and mechanical instabilities, assisted by preordering, occurring without diffusion. This unique mechanical and diffusion-less nature distinguishes AAT from liquid-liquid transitions.

multidisciplinary sciences
In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization

Bin Xiang,David J Hwang,Jung Bin In,Sang-Gil Ryu,Jae-Hyuck Yoo,Oscar Dubon,Andrew M Minor,Costas P Grigoropoulos

DOI: https://doi.org/10.1021/nl3007352

IF: 10.8

2012-01-01

Nano Letters

Abstract:Laser-based processing enables a wide variety of device configurations comprising thin films and nanostructures on sensitive, flexible substrates that are not possible with more traditional thermal annealing schemes. In near-field optical probing, only small regions of a sample are illuminated by the laser beam at any given time. Here we report a new technique that couples the optical near-field of the laser illumination into a transmission electron microscope (TEM) for real-time observations of the laser-materials interactions. We apply this technique to observe the transformation of an amorphous confined Si volume to a single crystal of Si using laser melting. By confinement of the material volume to nanometric dimensions, the entire amorphous precursor is within the laser spot size and transformed into a single crystal. This observation provides a path for laser processing of single-crystal seeds from amorphous precursors, a potentially transformative technique for the fabrication of solar cells and other nanoelectronic devices.
Phase Transformations of Mono-Crystal Silicon Induced by Two-Body and Three-Body Abrasion in Nanoscale

Jiapeng Sun,Liang Fang,Jing Han,Ying Han,Huwei Chen,Kun Sun

DOI: https://doi.org/10.1016/j.commatsci.2013.09.055

IF: 3.572

2014-01-01

Computational Materials Science

Abstract:This article is focused on understanding the structural phase transformations of mono-crystalline silicon induced by nanoindentation, two-body and three-body abrasion at the nanoscale using the large-scale molecular dynamics simulation. The evolution and distribution of the possible phases are discussed in terms of coordination number (CN), radial distribution function (RDF), bond angle distribution function (ADF) and atom type tracking. The results show a new phase transformation route that is an initial diamond cubic silicon turns into high density amorphous (HDA) beneath the moving particle and then transforms into low density metastable amorphous (LDMA) behind the particle in both two-body and three-body abrasion. Considering the different phase transformation between nanoindentation and two/three-body abrasion, a stress criterion is proposed to predict the phase transformation, which can be generally applied to hydrostatic pressure experiment, nanoscale uniaxial compression and nanoindentation. For nanoindentation, a common misunderstanding of a metastable phase is clarified, which is also observed in front of the moving particle in two/three-body abrasive.
In Situ Tem Study Of The Transitions Between Crystalline Si And Nonstoichiometric Amorphous Oxide Under Bipolar Voltage Bias

Xinchun Tian,Tao Ma,Lin Zhou,Geoff Brennecka,Xiaoli Tan

DOI: https://doi.org/10.1063/1.5100310

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:The electrical responses, either structurally or chemically, at the interface between a SiO2 thin film and a single crystalline Si substrate are an important research subject in Si-based devices. Dielectric breakdown-induced epitaxial migration of Si into SiO2 has been reported as a degradation mechanism in field effect transistors. Here, we show a direct observation of electric field induced conversion of single crystalline Si to nonstoichiometric amorphous oxide starting from the Si/native oxide interface using in situ transmission electron microscopy. We further show that nanocrystalline Si can form in the amorphous oxide under a voltage bias of reversed polarity. Electron energy loss spectroscopy and energy dispersive X-ray spectroscopy analyses indicate that the observed amorphization process was caused by the oxidation of Si and the recrystallization process was caused by the reduction of nonstoichiometric amorphous silicon oxide. Both transitions are a result of field-driven directional migration of oxygen which originally comes from its native oxide layer.
New Deformation-Induced Nanostructure in Silicon.

Bo Wang,Zhenyu Zhang,Keke Chang,Junfeng Cui,Andreas Rosenkranz,Jinhong Yu,Cheng-Te Lin,Guoxin Chen,Ketao Zang,Jun Luo,Nan Jiang,Dongming Guo

DOI: https://doi.org/10.1021/acs.nanolett.8b01910

IF: 10.8

2018-01-01

Nano Letters

Abstract:Nanostructures in silicon (Si) induced by phase transformations have been investigated during the past 50 years. Performances of nanostructures are improved compared to that of bulk counterparts. Nevertheless, the confinement and loading conditions are insufficient to machine and fabricate high-performance devices. As a consequence, nanostructures fabricated by nanoscale deformation at loading speeds of m/s have not been demonstrated yet. In this study, grinding or scratching at a speed of 40.2 m/s was performed on a custom-made setup by an especially designed diamond tip (calculated stress under the diamond tip in the order of 5.11 GPa). This leads to a novel approach for the fabrication of nanostructures by nanoscale deformation at loading speeds of m/s. A new deformation-induced nanostructure was observed by transmission electron microscopy (TEM), consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal. The formation mechanism of the new phase was elucidated by ab initio simulations at shear stress of about 2.16 GPa. This approach opens a new route for the fabrication of nanostructures by nanoscale deformation at speeds of m/s. Our findings provide new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.
Analysis of the Nano-Deformation Fields of Micro-Crack in Silicon by High-Resolution Transmission Electron Microscopy

Q. Gu,C. W. Zhao,H. Q. Jing,Y. M. Xing

DOI: https://doi.org/10.1117/12.839015

2008-01-01

Abstract:A nanoscale experimental study of micro-crack in silicon was presented by using a combination of high-resolution transmission electron microscopy and geometric phase analysis. The results show that there is an amorphous phase content in the crack body. The width of the amorphous narrow band which exists within the crack body is 2nm approximately. The geometric phase analysis technology was applied to calculate the strain fields of the crack tip. The trend of the experiment strain value ahead of the crack tip is the same with the trend of the isotropic elastic theory strain value.
Direct simulation of ion beam induced stressing and amorphization of silicon

Keith M. Beardmore,Niels Gronbech-Jensen

DOI: https://doi.org/10.1103/PhysRevB.60.12610

1999-05-19

Abstract:Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. We note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between different densities of amorphous samples. For any reasonable deformation rate, we observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in denser structures relative to crystalline Si. We conclude that although there is substantial agreement between experimental measurements and most simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally we show that annealing simulations of our amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in amorphous silicon are analogous to those in crystalline silicon.

Materials Science,Chemical Physics,Computational Physics

In Situ Observation of Shear-Driven Amorphization in Silicon Crystals

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Evolution of Shear Amorphization in Superhard Cubic Silicon Carbide

Nucleation Mechanisms of Shear Bands in Amorphous Alumina

Temperature-Dependent Friction-Induced Surface Amorphization Mechanism of Crystal Silicon

Pressure-induced Amorphization in the Nanoindentation of Single Crystalline Silicon

In situ Observation of Structural Evolution and Phase Engineering of Amorphous Materials during Crystal Nucleation

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Nucleation kinetics and virtual melting in shear-induced structural transitions

In-situ TEM observation of preferential amorphization in single crystal Si nanowire

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Virtual melting and cyclic transformations between amorphous Si, Si I, and Si IV in a shear band

Microstructural Observations of Α-Quartz Amorphization

Microscopic mechanisms of pressure-induced amorphous-amorphous transitions and crystallisation in silicon

In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization

Phase Transformations of Mono-Crystal Silicon Induced by Two-Body and Three-Body Abrasion in Nanoscale

In Situ Tem Study Of The Transitions Between Crystalline Si And Nonstoichiometric Amorphous Oxide Under Bipolar Voltage Bias

New Deformation-Induced Nanostructure in Silicon.

Analysis of the Nano-Deformation Fields of Micro-Crack in Silicon by High-Resolution Transmission Electron Microscopy

Direct simulation of ion beam induced stressing and amorphization of silicon