Abstract:Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 10^4--10^5 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data stored in a solid-state SCM do not require long retention times provided by flash memory (i.e., up to 10 years in modern devices); second, by exploiting retention time relaxation, we propose a novel mechanism, called Dense-SLC (D-SLC), which enables us perform multiple writes into a cell during each erase cycle for lifetime extension; and finally, we discuss the required changes in the flash management software (FTL) in order to use this characteristic for extending the lifetime of the solid-state part of an SCM. Using an extensive simulation-based analysis of a flash-based SCM, we demonstrate that D-SLC is able to significantly improve device lifetime (between 5.1X and 8.6X) with no performance overhead and also very small changes at the FTL software.

Exploiting Process Variation for Retention Induced Refresh Minimization on Flash Memory.

Leveraging Partial-Refresh for Performance and Lifetime Improvement of 3D NAND Flash Memory in Cyber-Physical Systems.

Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems

Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems

Special Section on Privacy Computing: Principles and Applications

Exploiting Uncorrectable Data Reuse for Performance Improvement of Flash Memory

Latency Variation Aware Read Performance Optimization on 3D High Density NAND Flash Memory.

A High Precision Refresh Method to Improve the Performance of Flash Storage Devices

Read Latency Variation Aware Performance Optimization on High-Density NAND Flash Based Storage Systems

Retention Trimming for Wear Reduction of Flash Memory Storage Systems

An Efficient Refresh Strategy of Flash Memory Via High Delay Blocks in LDPC

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

Process-variation Effects on 3D TLC Flash Reliability: Characterization and Mitigation Scheme

Power and endurance aware Flash-PCM memory system

Reducing Solid-State Drive Read Latency by Optimizing Read-Retry (Extended Abstract)

Stop unnecessary refreshing: extending 3D NAND flash lifetime with ORBER

Exploiting Process Variation for Read Performance Improvement on LDPC Based Flash Memory Storage Systems

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

A Latency-Aware Garbage Collection Strategy

Combining Cache and Refresh to Optimize SSD Read Performance Scheme.

Access Characteristic Guided Read and Write Regulation on Flash Based Storage Systems