Abstract:DOI: 10.1002/aelm.201500089 The advantages of APbI 3 perovskites in the solar cells fi eld are prominent in their optical and electronic properties. The small direct band gap of 1.55–1.61eV leads to a very board absorption range almost over the entire visible light region. [ 8,9 ] The direct band gap p–p transition, which was reported from a series of ab initio calculations, [ 9–11 ] makes these perovskites with better light absorption abilities than that of common p–s transition type thinfi lm solar cells materials such as CdTe. Moreover, the excitons generated by light absorption in perovskite are easy to be dissociated into free carriers at room temperature (the binding energy of exciton is few meV). [ 12,13 ] In addition, small carrier effective mass estimated from density function theory (DFT) calculations [ 14,15 ] is competitive to monocrystal silicon, with experimentally obtained long carrier lifetime and long carrier diffusion lengths exceeding a micrometer [ 16,17 ] Such long carrier diffusion lengths enable the solar cell application of thin APbI 3 fi lm with thickness of ≈500 nm by further improving their optical absorption effi ciency. To further explore the potentials of such materials, work on the underlying mechanisms of those advantages are still ongoing. [ 18–21 ] These work mainly focused on the investigations of functionalities for each part consisting of AMX 3 , namely, A, M, X, and/or their interactive behaviors. For instance, DFT calculations were employed to investigate the role of the organic cations A + in APbI 3 perovskites. [ 9,22 ] It was found that by choosing molecular cations A + with different ionic radius, the lattice volume can be easily altered, thus making the band gap tuning of perovskites more fl exible. [ 22,23 ] Also, the random orientation of polar molecular cation A + in APbI 3 will bring out nanoscale charge localization in the two band extremes according to Ma and Wang. [ 24 ] The charge localization in valance band maximum (VBM) and conduction band minimum (CBM) have no overlapping, suggesting that two separated “high-ways” for electrons and holes are responsible for the long carrier lifetime observed in the experiments. [ 25 ] Rensmo and co-workers showed that a shift of the valence band edges will occur for the APbBr 3 perovskite due to an intrinsic binding energy difference of the halide ions. [ 26 ] Besides, the solar cells using mixed-halide perovskites exhibited long carrier diffusion distances and high effi ciencies. By different mixture ratio of halide, the band gap of perovskites can be dramatically changed. [ 27 ]

Narrow‐Bandgap Mixed 0D/1D Bismuth Bromide Perovskite Hydrate Enabled by Aromatic Ditertiary Ammonium Spacer

Reversible Structural Transformation of Metastable Lead-Free Organic-Inorganic Hybrid Bismuth Halide Single Crystals

Unravelling the Interfacial Dynamics of Band‐gap Funneling in Bismuth‐based Halide Perovskites

A Lead-free Organicnorganic Halide Perovskite Absorber with Photoconductive Response

Methylated diammonium spacer modulated three-dimensional lead bromide perovskitoid hybrids with distinct photoconductivity anisotropy

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskites

Inorganic CsPb1−xSnxIBr2 for Efficient Wide‐Bandgap Perovskite Solar Cells

Revealing unusual bandgap shifts with temperature and bandgap renormalization effect in phase-stabilized metal halide perovskite thin films

Enhanced optical absorption in two-dimensional Ruddlesden-Popper (C6H5CH2NH3)2PbI4 perovskites via biaxial strain and surface doping

Band Structure Optimized by Electron‐Acceptor Cations for Sensitive Perovskite Single Crystal Self‐Powered Photodetectors

Revealing Unusual Bandgap Shifts with Temperature and Bandgap Renormalization Effect in Phase‐Stabilized Metal Halide Perovskite Thin Films

Understanding the Impact of Bismuth Heterovalent Doping on the Structural and Photophysical Properties of CH 3 NH 3 PbBr 3 Halide Perovskite Crystals with Near-IR Photoluminescence.

Screening the Structural, Dynamical, and Mechanical Stability, Tuning Band Gaps, and Optical Properties of Inorganic Cs2RbABr6 (A = Tl and Bi) Double Perovskites Halide Using DFT Calculations

The Structural, Electronic, And Optical Properties Of Organic-Inorganic Mixed Halide Perovskites Ch3nh3pb(I1-Yxy)(3) (X = Cl, Br)

Synthesis, Crystal Structure and Properties of a Perovskite-Related Bismuth Phase, (NH4)3Bi2I9

Bandgap Engineering via Doping Strategies for Narrowing the Bandgap below 1.2 eV in Sn/Pb Binary Perovskites: Unveiling the Role of Bi3+ Incorporation on Different A-Site Compositions

Structure engineering of hierarchical layered perovskite interface for efficient and stable wide bandgap photovoltaics

Deep insight into structural and optoelectronic properties of mixed anion perovskites

Lead Replacement in CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskites

Narrowing bandgap and enhanced mechanical and optoelectronic properties of perovskite halides: Effects of metal doping

Lead-free double halide perovskite Cs3BiBr6 with well-defined crystal structure and high thermal stability for optoelectronics