Abstract:Two conjugated small molecules with different molecular length, DPAPIT and DPAPPD, in which an electron donor dimethylamino moiety and an electron acceptor phthalimide core unit are bridged by another electron-accepting azobenzene block, were designed and synthesized. DPAPIT molecule with longer conjugation length stacked regularly in the solid state and formed uniform nanocrystalline film. The fabricated memory devices with DPAPIT as active material exhibited outstanding nonvolatile ternary memory effect with the current ratio of similar to 1 : 10(1.7) : 10(4) for "0", "1" and "2" states and all the switching threshold voltages lower than -3 V. In contrast, the shorter molecule DPAPPD showed amorphous microstructure and no obvious conductive switching behavior was observed in the device. The crystallinity and surface roughness of DPAPIT thin films were significantly improved as the annealing temperature increased, lowering the switching threshold voltages which are highly desirable for low-power consumption data-storage devices. It is worth noting that the tristable memory signals of DPAPIT film could also be achieved by using conductive atomic force microscopy with platinum-coated probe, which enables fabrication of nano-scale or even molecular-scale device, a significant progress for the ultra-high density data storage application. Mechanism analysis demonstrated that two charge traps with different depth in the molecular backbone were injected by charge carriers progressively as the external bias increased, resulting in the formation of three distinct conductive states (OFF, ON1 and ON2 states).

Improving of Molecular Planarity Via Tailoring Alkyl Chain Within the Molecules to Enhance Memory Device Performance

Bistable Memory Devices with Lower Threshold Voltage by Extending the Molecular Alkyl-Chain Length

Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage.

Molecular Length Adjustment for Organic Azo-Based Nonvolatile Ternary Memory Devices

Synthesis Of Imidazole Derivatives And Study Of The On-Based Different Memory Performances

Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

Altering the Position of Phenyl Substitution to Adjust Film Morphology and Memory Device Performance

Decreasing the Energy Consumption of Memory Devices by Enhancing the Conjugation Extent of the Terminal Electron-Donating Moieties Within Molecules.

Improved Ternary Memory Performance of Donor–acceptor Structured Molecules Through Cyano Substitution

Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials.

Two Quinoxaline Derivatives Designed from Isomer Chemistry for Nonvolatile Ternary Memory Device Applications

A Novel Bat-Shaped Dicyanomethylene-4H-pyran-Functionalized Naphthalimide for Highly Efficient Solution-Processed Multilevel Memory Devices.

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Organic Memory Device and Synaptic Simulation Based on Indacenodithienothiophene (IDTT) Copolymers with Improved Planarity

Enhancing the Coplanarity of the Donor Moiety in a Donor-Acceptor Molecule to Improve the Efficiency of Switching Phenomenon for Flash Memory Devices

Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules

Electronic Effect of Terminal Acceptor Groups on Different Organic Donor-Acceptor Small-Molecule Based Memory Devices.

Preparation of Homopolymers from New Azobenzene Organic Molecules with Different Terminal Groups and Study of Their Nonvolatile Memory Effects

Controlling Crystallite Orientation of Diketopyrrolopyrrole‐Based Small Molecules in Thin Films for Highly Reproducible Multilevel Memory Device: Role of Furan Substitution

Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change