Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage.

Shifeng Miao,Hua Li,Qingfeng Xu,Youyong Li,Shunjun Ji,Najun Li,Lihua Wang,Junwei Zheng,Jianmei Lu
DOI: https://doi.org/10.1002/adma.201202319
IF: 29.4
2012-01-01
Advanced Materials
Abstract:By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than -2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices. [GRAPHICS] .
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