First–Principles Calculations of Microdomain Models for Β–sialon Si5AlON7

CM Fang,R Metselaar

DOI: https://doi.org/10.1111/j.1151-2916.2003.tb03588.x

IF: 4.186

2003-01-01

Journal of the American Ceramic Society

Abstract:The experimentally observed preferential distribution of O and N atoms in β–sialon can be obtained from a first–principles calculation if it is assumed that microdomains are formed, in accordance with NMR observations.

What problem does this paper attempt to address?

Site Preferences in Β-Sialon from First-Principles Calculations

CM Fang,R Metselaar

DOI: https://doi.org/10.1039/b209112g

2002-01-01

Journal of Materials Chemistry

Abstract:First-principles calculations based on density-functional theory (DFT) within the pseudo-potential method have been performed to identify site preferences in beta-sialon, Si6-zAlzOzN8-z. With increasing z the calculated lattice volume increases while the bulk modulus decreases; calculated values are in excellent agreement with the experimental data. The calculations also showed that the atomic arrangements with the maximum number of Al-O and Si-N bonds have the lowest energy. There are different Si(O,N)(4) and Al(O,N)(4) tetrahedra in the sialons, which is in line with the results of NMR experiments. Meanwhile, the calculated occupations of oxygen at 2c sites are still different from those determined by neutron diffraction, which indicates the necessity of microdomain models for these compounds.
First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

YINGCHUN DING,HAIPING ZHOU,MING XU,YIBING SHEN,QINGYUN CHEN,WEN-JUN ZHU,HONGLIANG HE

DOI: https://doi.org/10.1142/S0217979208039368

2008-01-01

International Journal of Modern Physics B

Abstract:The electronic structure, and optical and mechanical properties of gamma-Si3N4 are calculated by means of the plane-wave pseudo-potential method (PWP) with generalized gradient approximation (GGA) and local density approximation (LDA). The calculated values are in good agreement with experimental results. A comparative investigation reveals that the band gap calculated by GGA agrees better with the experimental value than by the other methods, while the calculated bulk modulus by LDA is comparable with that by the method of orthogonalized linear combinations of atomic orbitals (OLCAO). Our results indicate that a satisfactory calculation of the structures and properties of gamma-Si3N4 could be achieved by combining GGA and LDA methods.
First-principles Calculations of the Stability and Local Structure of -Sialon Ceramics on the Line Si3N4–½Ca3N2:3AlN

Cm Fang,R Metselaar

DOI: https://doi.org/10.1088/0953-8984/16/16/016

2004-01-01

Abstract:The atomic structures of calcium sialons CaxSi12−mAlmN16 (m = 0.5, 1, 2, 4) with the α- or β-Si3N4-type structure were calculated, using the ab initio DFT approach, including relaxations of both lattice parameters and positions of the atoms. For all m values the α-Si3N4-type structure has a lower energy than the β-type. For m = 1, 2 and 4 the α-type structure is also stable against decomposition into the metal nitrides, in agreement with experimental data. For m = 0.5 stability becomes uncertain. Al ions prefer positions close to Ca. Rather strong structural relaxations occur around the Ca ion.
First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Xiaodong Pi,Xiaobo Chen,Deren Yang

DOI: https://doi.org/10.1021/jp111548b

2011-01-01

The Journal of Physical Chemistry C

Abstract:First-principles study of boron (B)-doped silicon nanocrystals (Si NCs) at 0 K in the framework of density functional theory has been carried out. It is found that B prefers residing at the surface of Si NCs, similar to phosphorus (P). Different from P, B induces surface restructuring when B is one- or two-coordinated at the NC surface. B doping does not significantly change the bandgap of Si NCs, but in most cases B introduces deep energy levels in the bandgap of Si NCs. This explains the B-doping induced quenching of band-edge light emission usually observed in experiments. The negligible infrared absorption of B-doped Si NCs may result from the fact that only three-coordinated B is formed at the NC surface. The electronic transitions involving the energy levels induced by these three-coordinated B are not in the infrared range.
First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Junnan Han,Dongke Li,Teng Sun,Jiaming Chen,Yuhao Wang,Xiaodong Pi,Wei Li,Ling Xu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1402-4896/acd08f

2023-01-01

Physica Scripta

Abstract:Doping in Si nanocrystals (Si NCs) is an interesting topic since the doping behaviors in the nanoscale are quite complicated compared with the case in bulk Si. In our present work, we use the first-principles calculation to study Phosphorus (P) or Boron (B) doping in Si NCs with the size of 2-8 nm embedded in SiO2 matrix by taking into account the existence of dangling bonds on the interfacial region. It is found that both P and B impurities tend to stay at the interfacial region to passivate the dangling bonds when the dot size is as small as 2 nm. However, P impurities exhibit the possibility to occupy the inner sites of Si NCs while B impurities are more difficult to be introduced into Si NCs due to the large formation energy. Our detailed study suggests that P or B impurities preferentially stay at the intermediate sites between Si and oxygen to form stable bonding configurations. With increasing the dot size from 2 nm to 8 nm, both P and B impurities can enter into the Si NCs more easily due to the relaxation of stress in the larger-sized Si NCs. Our theoretical results are in good agreement with the experimental observations.
First-principles Electronic Structure Calculations of BaSi7N10 with Both Corner- and Edge-Sharing SiN4 Tetrahedra

Cm Fang,Ht Hintzen,G De With

DOI: https://doi.org/10.1016/s0925-8388(01)01866-7

IF: 6.2

2002-01-01

Journal of Alloys and Compounds

Abstract:First-principles band structure calculations were performed for the ternary alkaline-earth silicon nitride BaSi7N10 using the density functional theory (DFT) within the pseudo-potential (PP) method. The calculations show that both the coordination number of nitrogen by silicon (N[x]) as well as the way of sharing SiN4 tetrahedra (corner vs. edge) influence the local electronic structure of these atoms. The top of the valence band is dominated by the 2p states of the N[2] atoms, while the N[3] 2p states are positioned lower in energy. It is also noted that edge-sharing N[3] atoms show N[2] character. The conduction band is determined by Ba 6s states. The compound is calculated to be a wide band gap semiconductor with an indirect energy gap of about 3.8 eV. The direct energy gap is predicted to be about 4.0 eV, in agreement with the experimental value of 4–4.5 eV.
First-principles electronic structure calculations of Ba5Si2N6 with anomalous Si2N6 dimeric units

C.M Fang,H.T Hintzen,R.A de Groot,G de With

DOI: https://doi.org/10.1016/S0925-8388(01)01204-X

IF: 6.2

2001-01-01

Journal of Alloys and Compounds

Abstract:First-principles band structure calculations were performed for the ternary alkaline-earth silicon nitride Ba5Si2N6 using the LSW method. The calculations show that both the (zero-)dimensionality of the [Si2N6]10− dimeric units present in this structure and the coordination number of nitrogen by silicon have strong influences on the local electronic structure of these atoms. The interaction between the semicore-level states Ba 5p and N 2s is significant. Finally the compound is calculated to be a semiconductor with an indirect gap of 0.7 eV. The top of the valence band is dominated by the 2p states of the N[1] atoms. The conduction bands are determined by N 3s states hybridized with Ba 6s states.
Study of Raman Spectra for Γ-Al2o3 Models by Using First-Principles Method

Yong Liu,Bo Cheng,Kang-Kai Wang,Guo-Ping Ling,Jun Cai,Chen-Lu Song,Gao-Rong Han

DOI: https://doi.org/10.1016/j.ssc.2013.09.030

IF: 1.934

2014-01-01

Solid State Communications

Abstract:The Raman spectra of spinel and nonspinel models for γ-Al2O3 were calculated by using a first principles method and an assignment on the basis of the proposed symmetry was established. The IR spectra were also calculated to validate the method. The results show that the Raman spectra are sensitive to the structural differences between the spinel and nonspinel models. The spinel model provides more medium peaks at the lower wave number range while the nonspinel model is much more flat. The Born effective charges, electron localization function, and dielectric tensors were also discussed briefly. These results provide valuable information for further insight into the structural properties of γ-Al2O3 in atomic scales.
Two-dimensional Antiferromagnetic Boron Form First Principles

Chengguang Yue,Kun Luo,Bo Xu

DOI: https://doi.org/10.1063/1.5092323

IF: 1.697

2019-01-01

AIP Advances

Abstract:A new two-dimensional (2D) antiferromagnetic semiconducting boron structure, named as M-B28, is predicted using ab initio evolutionary structure searching. First-principles calculations show that M-B28 has a lower energy than other 2D magnetic boron structures and is dynamically stable. The unpaired electrons from the caps of B26 clusters lead to magnetism in M-B28, while making its highest valence band flat and isolated. The Néel temperature and mechanical properties of M-B28 are evaluated with the Ising model and strain-stress method, respectively, revealing a transition temperature of 32 K and the ideal strengths of 43.7 N/m along x direction and 38.5 N/m along y direction.
First Principle Study on Β-Sic(001)-(2×1) Surface Structure

Xu Peng-Shou,Li Yong-Hua,Pan Hai-Bin

DOI: https://doi.org/10.7498/aps.54.5824

2005-01-01

Abstract:We calculate the atomic and electronic structure of β-SiC(001)-(2×1) using augmented plane wave and local orbital (APW+LO) method. The calculated results show that the atomic structure of β-SiC(001)-(2×1) surface can be described by symmetrical Si dimmer model, which is different from the asymmetrical Si dimmer model of Si(001)-(2×1) surface. The bond length of Si dimmer of β-SiC(001)-(2×1) surface is 0.269 nm, which is larger than that of Si(001)-(2×1) surface. The calculated results of electronic structure show that a prominent density of states exists at the Fermi level, so β-SiC(001)-(2×1) surface has the characteristics of metal. There are four surface state bands in the gap. Among them, two occupied surface state bands have been confirmed by valence band spectra of synchrotron radiation photoelectron spectroscopy.
First Principles Calculations of Electronic Structures and Optical Properties of Al- and Ca-doped Β-Si3n4

X. F. Lu,D. Qiu,M. Chen,L. Fan,C. Wang,H. J. Wang,G. J. Qiao

DOI: https://doi.org/10.1179/1433075x12y.0000000049

2013-01-01

Materials Research Innovations

Abstract:The crystal structures, formation energies, electronic structures and optical properties of Al- and Ca-doped beta-Si3N4 were studied using first principles calculations based on density functional theory within the generalised gradient approximation. Results show that the band gaps E-g of Al- and Ca-doped beta-Si3N4 decrease distinctly in comparison to that of beta-Si3N4. The band structures of Ca-doped supercell behave like semiconductors. The binding energy E-b and formation energy E-f of beta-Si3N4 doped with Al are lower than those of Ca-doped beta-Si3N4, indicating that the former has a more stable crystal structure than the latter. The static dielectric constant epsilon(0) increases significantly to similar to 35 after Al doping and almost does not change after Ca doping. The strong absorption band located at 5.11-20.81 eV becomes much sharper and shows a red shift after Al and Ca doping. The offset of the Al-doped system is larger than that of the Ca-doped system. The absorption coefficient can be remarkably modulated by Al and Ca doping, indicating the potential applications of Al- and Ca-doped beta-Si3N4 in optical system.
Theoretical Prediction of the Influence of Defects and Atomic Occupation on the Elastic and Electronic Properties of NbSi2 Form the First-Principles Calculations

Quan Feng,Zhi-jie Li,Xudong Zhang,Feng Wang

DOI: https://doi.org/10.1016/j.cplett.2023.140394

IF: 2.719

2023-01-01

Chemical Physics Letters

Abstract:In now days, the transition metal silicides are one of the promising materials for making high-temperature materials. To improve the inherent brittleness of the transition metal silicides, the elastic and electronic prop-erties of the C40-type NbSi2 disilicides have been predicted using first-principles calculations. Six defect models (V-Va, Si-Va, N-V, N-Si, O-V, O-Si) were chosen to evaluate the elastic properties of transition metal silicides. Ac-cording to the data of thermodynamic parameters, NbSi2 with the different defect and doping models shows the phase stability. The introduction of different defects and doping models changes the mechanical behavior. The defect and doping models lead to the decrease in the deformation resistance and hardness of the perfect NbSi2. Additionally, the defect and doping models result in the perfect NbSi2 to actualize the brittle-to-ductile transi-tion. The Nb defects resulted in NbSi2 having the greatest degree of anisotropy. The electronic structures are calculated to discuss the brittle-to-ductile transition for NbSi2 with defects.
Theoretical Study of Two-Dimensional Boron Silicide from First-Principles

Qiang Li,Rui Zhang,Tianquan Lv

DOI: https://doi.org/10.1016/j.commatsci.2016.11.020

IF: 3.572

2017-01-01

Computational Materials Science

Abstract:Using first-principles calculations and evolutionary algorithm, we predict two honeycomb (P1- and C2-type) structures of BSi with two-atom thickness. Phonon spectrum calculations show that both structures are thermodynamically stable. A weak covalent bonding interaction between B atoms along [001] direction plays a very important role in structure stability of P1- and C2-type BSi. P1-type BSi is semi-metallic, while C2-type exhibits a semiconductor band structure and has a good absorption of photons in the range of 1.5-2.5 eV that is very promising for photoelectric applications. An e(22) piezoelectric coefficient of 1.65 x 10 (10) Cm (1) is predicted for C2-type BSi, which makes it a potential candidate for piezoelectric applications at nano-scale. Moreover, three-phonon interactions are adopted to evaluate phonon lifetimes, phonon linewidths and lattice thermal conductivity. Although both P1- and C2-type BSi have a similar honeycomb structure and same elements, the maximum lattice thermal conductivity of P1-type BSi is around 6 times higher than that of C2-type BSi. Additionally, P1-type BSi exhibits remarkably higher phonon lifetimes than C2-type BSi. (C) 2016 Elsevier B.V. All rights reserved.
First-Principles Calculations Of Metal Stabilized Si-20 Cages

Q. Sun,Q. Wang,T. Briere,V. Kumar,Y. Kawazoe,P. Jena

DOI: https://doi.org/10.1103/PhysRevB.65.235417

IF: 3.7

2002-01-01

Physical Review B

Abstract:It is well known that sp(2) bonding in carbon can result in stable cage structures, but pure Si clusters with similar cage structures are unstable. Using first-principles calculations, we show that a dodecahedral cage of silicon can be stabilized dynamically as well as energetically by doping with Ba, Sr, Ca, Zr, and Pb atoms to create structures of silicon similar to that of the smallest carbon fullerene. The stability and bonding in such cages shed light on Si clathrates in which Si-20 is the basic building block of the structure. Moreover, the charge distributions and highest-occupied-lowest-unoccupied molecular orbital gaps for these cage structures can be tuned by changing the metal atom. This allows additional freedom for the design of nanomaterials involving Si.
Application Of First-Principles Methods For The Calculation Of The Crystal And Electronic Structure Of Oxynitrides

Cm Fang,R Metselaar,Ht Hintzen,G De With

DOI: https://doi.org/10.4028/www.scientific.net/KEM.206-213.1149

2002-01-01

Key Engineering Materials

Abstract:Theoretical simulations using Density Functional Theory (DFT) within ab initio total-energy and molecular-dynamics method have been performed for several oxynitride materials. Examples dealt with are compounds in the Ta-O-N, Si-O-N and Al-O-N systems. Random or partially ordered distributions of the oxygen and nitrogen ions as well as other structural defects can be predicated very well by these methods. Local structure relaxation and its influence on the electronic properties are addressed.
Structural, electronic properties and boron stability of (001) surface of Nb5Si3 intermetallic by first-principles calculations

Dan Hong,Wei Zeng,Mi Zhong,Xia Xu,Fu-Sheng Liu,Bin Tang,Qi-Jun Liu

DOI: https://doi.org/10.1016/j.vacuum.2020.109558

IF: 4

2020-09-01

Vacuum

Abstract:The structural, electronic and surface properties of (001) surface with four different terminations of Nb5Si3 are discussed by using the first-principles calculations in this research. Firstly, we discuss the formation enthalpy and density of states of bulk Nb5Si3, finding that the calculated results are consistent with the previous experimental and calculated data. It can be interpreted as that the calculated method used is credible. The relaxed degree is explicitly described by the relaxed parameters (Δz, δz, d i,i+1 and r i) of (001) surface. Density of states shows that the outermost layer states are the major ingredient for surfaces and the surface states arise after the formation of surfaces. The lowest surface energy reflects that (001)-Si surface is the most stable surface. The segregation energy, interlayer spacing and density of states are calculated to discuss the boron stability in Nb2-and NbSi-terminations surfaces. According to the segregation energy, we know that boron is more stable at surface than Sub2 and the segregation energy of inner layer is positive, indicating that we can adopt some methods like heating to drive boron segregating to surface, which can form the protective oxide layers to ameliorate the oxidation resistance of surface. The intensive bonding interactions between B and its contiguous atoms origin from the investigation of interlayer relaxations. After B substitutions, the density of states has the changes that appear at its substitutional layer and the metallic properties are decreased in the two terminations surfaces. Oxygen adsorption further verify that alloying B can promote the oxidation resistance of Nb5Si3.

materials science, multidisciplinary,physics, applied
A First-Principles Study of the Electronic Structure and Mechanical and Optical Properties of Caalsin3

Zhanyu Wang,Bo Shen,Fei Dong,Songyou Wang,Wan-Sheng Su

DOI: https://doi.org/10.1039/c5cp01761k

2015-01-01

Abstract:The mechanical properties, electronic structures and optical properties of CaAlSiN3 were investigated using the first-principles calculations. The elastic constants, bulk moduli, shear moduli, Young's moduli, and Poisson's ratio were obtained. These results indicate that CaAlSiN3 is mechanically stable and a relatively hard material. Moreover, this compound has an indirect band gap of ∼3.4 eV according to its band structure and density of states. The linear photon energy dependent dielectric functions and related optical properties including the refractive index, extinction coefficient, absorption spectrum, reflectivity, and energy loss spectrum were computed and discussed. It is shown that no sizable anisotropy is found in the optical properties of CaAlSiN3. The obtained structural estimation and some other results are in agreement with available experimental and theoretical data. This investigation is not only helpful for better understanding the electronic, mechanical and optical properties of CaAlSiN3, but also will open up the possibility of its use in device applications.
First-principles study on alpha-SiC (10(1)over-bar-0) surface structure

CK Xie,PS Xu,FQ Xu,HB Pan

IF: 0.906

2002-01-01

Acta Physica Sinica

Abstract:We present a theoretical calculation on the atomic and electronic structure of alpha-SiC and its non-polar (1010) surface using the full-potential-linear-augmented-plane-wave (FPLAPW) approach. The calculated lattice constants and bulk modulus of a-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of a-SiC (1010) surface have been calculated by employing slab and supercell models. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which both Si and C atoms have the tendency to move down toward the bulk to form planar configuration with their neighbours and Si moves further toward the bulk than C does. Furthermore, surface relaxation induces the transformation from semi-metallic to semiconducting characterization.
Prediction of NMR, X-ray and Mössbauer experimental results for amorphous Li-Si alloys using a novel DFTB model

Francisco Fernandez,Manuel Otero,Ma. Belén Oviedo,Daniel E. Barraco,S. Alexis Paz,Ezequiel P. M. Leiva

2023-05-18

Abstract:Silicon anodes hold great promise for next-generation Li-ion batteries. The main obstacle to exploiting their high performance is the challenge of linking experimental observations to atomic structures due to the amorphous nature of Li-Si alloys. We unveil the atomistic-scale structures of amorphous Li-Si using our recently developed density functional tight-binding model. Our claim is supported by the successful reproduction of experimental X-ray pair distribution functions, NMR and Mössbauer spectra using simple nearest neighbors models. The predicted structures are publicly available.

Materials Science
Atomistic Simulation of the Mechanical Properties of Β-Sic Based on the First-Principles

Renhui Zhang,Senlin Leng,Yingchang Yang,Wei Shi,Zhibin Lu

DOI: https://doi.org/10.1016/j.physb.2017.02.014

2017-01-01

Abstract:On the basis of the pseudopotential plane-wave method and the local-density-functional theory, this work studied the energetics and stress-strain relationship of β-SiC, where uniform uniaxial compression and tension were considered along (001), (110) and (111) planes. The calculated results were in consistence with the experimental data. The present work should be conducive to understanding the mechanical property of β-SiC.

First–Principles Calculations of Microdomain Models for Β–sialon Si5AlON7

Site Preferences in Β-Sialon from First-Principles Calculations

First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

First-principles Calculations of the Stability and Local Structure of -Sialon Ceramics on the Line Si3N4–½Ca3N2:3AlN

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

First-principles Electronic Structure Calculations of BaSi7N10 with Both Corner- and Edge-Sharing SiN4 Tetrahedra

First-principles electronic structure calculations of Ba5Si2N6 with anomalous Si2N6 dimeric units

Study of Raman Spectra for Γ-Al2o3 Models by Using First-Principles Method

Two-dimensional Antiferromagnetic Boron Form First Principles

First Principle Study on Β-Sic(001)-(2×1) Surface Structure

First Principles Calculations of Electronic Structures and Optical Properties of Al- and Ca-doped Β-Si3n4

Theoretical Prediction of the Influence of Defects and Atomic Occupation on the Elastic and Electronic Properties of NbSi2 Form the First-Principles Calculations

Theoretical Study of Two-Dimensional Boron Silicide from First-Principles

First-Principles Calculations Of Metal Stabilized Si-20 Cages

Application Of First-Principles Methods For The Calculation Of The Crystal And Electronic Structure Of Oxynitrides

Structural, electronic properties and boron stability of (001) surface of Nb5Si3 intermetallic by first-principles calculations

A First-Principles Study of the Electronic Structure and Mechanical and Optical Properties of Caalsin3

First-principles study on alpha-SiC (10(1)over-bar-0) surface structure

Prediction of NMR, X-ray and Mössbauer experimental results for amorphous Li-Si alloys using a novel DFTB model

Atomistic Simulation of the Mechanical Properties of Β-Sic Based on the First-Principles