Abstract:Nanocrystalline zirconia (ZrO2) film with thickness of 305nm deposited on a silicon substrate was irradiated with 2MeV Au ions to different fluences at different temperatures. The implanted ion profiles were measured by time-of-flight secondary ion mass spectrometry (ToF-SIMS) and simulated using the stopping and range of ions in matter (SRIM) code, respectively. The experimental results show that a large fraction of the incident Au ions penetrates through the ZrO2 film and are deposited into the Si substrate. At the interface of ZrO2 and Si, a sudden decrease of Au concentration is observed due to the much larger scattering cross section of Au in ZrO2 than in Si. The depth profile of the Au ions is measured in both the ZrO2 films and the Si substrates, and the results show that the Au distribution profiles do not exhibit a dependence on irradiation temperature. The local Au concentration increases proportionally with the irradiation fluence, suggesting that no thermal or irradiation-induced redistribution of the implanted Au ions. However, the Au concentration in the ZrO2 films, as determined by SIMS, is considerably lower than that predicted by the SRIM results, and the penetration depth from the SIMS measurements is much deeper than that from the SRIM predictions. These observations can be explained by an overestimation of the electronic stopping power, used in the SRIM program, for heavy incident ions in light targets. Overestimation of the heavy-ion electronic stopping power may lead to errors in local dose calculation and underestimation of the projected range of slow heavy ions in targets that contain light elements. A quick estimate based on a reduced target density may be used to compensate the overestimation of the electronic stopping power in the SRIM program to provide better ion profile prediction.

MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate

Role of Carrier Concentration in Swift Heavy Ion Irradiation Induced Surface Modifications

Rutherford backscattering/channeling study of the implanted MeV Au+ in silicon

Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+ Ions Implanted into Si

Burrowing Of Pt Nanoparticles Into Sio2 During Ion-Beam Irradiation

Determination of the Displacement Energies of O, Si and Zr under Electron Beam Irradiation

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Irradiation Effects on Multilayered W/ZrO2 Film under 4 MeV Au Ions

Grain Growth and Phase Stability of Nanocrystalline Cubic Zirconia under Ion Irradiation

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Angular Distribution and Recoil Effect for 1mev Au+ Ions Through a Si3N4 Thin Foil

Microanalyses of Ar+-Bombarded Zirconia Yttria Films on Silicon Substrates

Irradiation simulation of zirconium using high energy argon implantation

Study of the Structural and Electrical Properties of Silicon Ion Irradiated Zirconium Nitride Thin Films

Grain growth of nanocrystalline 3C-SiC under Au ion irradiation at elevated temperatures

Amorphization of Nanocrystalline Monoclinic Zro2 by Swift Heavy Ion Irradiation

Optical response of free-carrier plasma effects of MeV ion implanted silicon

Fabrication and thermal evolution of nanoparticles in SiO2 by Zn ion implantation

ZrSi Formation at ZrN/Si Interface Induced by Ballistic and Ionizing Radiations

Microstructural Evolution And Nanocrystal Formation In Pb+-Implanted Zrsio4 Single Crystals

Swift heavy ion irradiation effects in zirconium and hafnium carbides