Growth of Porous In2s3 Films and Their Photoelectrochemical Properties

Feng-Yun Su,Wei-De Zhang,Yi-Ye Liu,Rong-Huan Huang,Yu-Xiang Yu
DOI: https://doi.org/10.1007/s10008-015-2868-x
IF: 2.747
2015-01-01
Journal of Solid State Electrochemistry
Abstract:Flower-like In2S3 porous films composed of connected ultra-thin curved nanoflakes were prepared on fluorine-doped tin oxide (FTO) substrate by a solvothermal process. The structure and morphology of the In2S3 films were characterized by X-ray diffraction and scanning electron microscopy. The optical properties of the In2S3 films were characterized by UV–vis absorption. The obtained In2S3 films showed n-type semiconductive characteristics and exhibited high anodic photocurrent under visible light illumination. By properly monitoring the experimental conditions, we find that the amount of thiourea, volume ratio of diethylene glycol and deionized water, and reaction time affect the morphology and the photoelectrochemical properties of the In2S3 films. The photocurrent density was achieved from the In2S3 thin film prepared using 3 h, with a transient photocurrent of ca. 1.3 mA cm−2 at the bias potential of +0.2 V vs. RHE.
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