Abstract:Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0μm in thickness, with a Zr∕(Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr∕(Zr+Ti) ratio had on the crystal structure, dielectric and ferroelectric properties, and piezoelectric response of these films with different crystal orientations were systematically investigated. We ascertained from x-ray-diffraction reciprocal-space-mapping analysis that (001)T-∕(100)T-∕(100)R-,(101)T-∕(110)T-∕(110)R-∕(101¯)R-, and (111)T-∕(111)R-∕(111¯)R-oriented films had epitaxially grown on the respective (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates. The constituent phase changed from a tetragonal single phase, a mixture phase of a tetragonal and rhombohedral, to a rhombohedral single phase with increasing Zr∕(Zr+Ti) ratio irrespective of the orientation of the substrates. However, the range of the Zr∕(Zr+Ti) ratio of the film with the mixture phase differed depending on crystal orientation. This suggests that the stress relaxation process applied from the substrates changed due to crystal orientation. The relative dielectric constant was maximum for films with the mixture phase regardless of the crystal orientation. Remanent polarization was also maximum for these films on the (111)cSrRuO3∕∕SrTiO3 substrates, while it was minimum on the (100)c- and (110)c-oriented SrRuO3∕∕SrTiO3 substrates. Films with two phases coexisting had larger electric-field-induced strain than films with a single tetragonal or rhombohedral phase for the (111)-oriented films, but there were no remarkable changes in the (100)- and (110)-oriented films. Small ac signal measurements suggested that domain-wall motions easily occurred in the (111)-oriented films with the mixture phase compared with other orientations. These results indicated that the larger field-induced strain of the (111)-oriented PZT films consisting of a mixture of tetragonal and rhombohedral phases largely contributed to extrinsic factors such as domain-wall motions and phase transformation due to the applied electric field.

Combined Contributions of Phase Structure and Preferred Orientation on the Piezoelectric Properties of Polycrystalline (pb0.94la0.04) Zr0.6ti0.4o3 Thin Films

Thickness-Dependent Monoclinic Phases and Piezoelectric Properties Observed in Polycrystalline (pb0.94la0.04)(zr0.60ti0.40)o3 Thin Films

Orientation-dependent Phase Switching Process and Strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Thin Films

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Fabrication and Characterization of Sol–Gel Derived (100)‐textured (pb0.97la0.02)(zr0.95ti0.05)o3 Thin Films

Improved field-induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Effect of the Orientation on the Ferroelectric–antiferroelectric Behavior of Sol–gel Deposited (pb,nb)(zr,sn,ti)o3 Thin Films

Dielectric and Ferroelectric Properties of Highly Oriented (Pb,nb)(zr,sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Roles Of Nano-Domain Switching And Non-180 Degrees Domains In Enhancing Local Piezoelectric Responses Of Highly (100)-Oriented Pb(Zr0.60ti0.40)O-3 Thin Films

A Comprehensive Investigation on the Phase Transformation Behavior and Electrical Properties of (pb1−xbax)zro3 (≤x≤0.5) Thin Films

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films

Orientation-dependent Piezoelectricity and Domain Characteristics of Tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 Thin Films on Nb-doped SrTiO3 Substrates

Roles of Nano-Domain Switching and Non-180° Domains in Enhancing Local Piezoelectric Responses of Highly (100)-Oriented Pb(Zr<sub>0.60</sub>Ti<sub>0.40</sub>)O<sub>3</sub> Thin Films<sup>*</sup>

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Outstanding Piezoelectric Performance in Lead‐Free 0.95(k,na)(sb,nb)o3‐0.05(bi,na,k)zro3 Thick Films with Oriented Nanophase Coexistence

Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio

Phase Transformation Properties of Highly (100)-Oriented Plzst 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-Srtio3 Single-Crystal Substrates

Orientation-Dependent Piezoelectric Properties in Lead-Free Epitaxial 0.5Bazr(0.2)ti(0.8)o(3)-0.5Ba(0.7)ca(0.3)tio(3) Thin Films

Polarization Alignment, Phase Transition, and Piezoelectricity Development in Polycrystalline0.5ba(zr0.2ti0.8)o3

Orientation Dependence on Piezoelectric Properties of Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 Epitaxial Thin Films