Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Effect of Cu Substrate Roughness on Growth of Graphene Domains at Atmospheric Pressure

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Electron Transport in Graphene-Versus Al/Pd-Coated Thin Cu Films with Low-Surface Roughness: A First Principles Study.

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

The effect of catalytic copper pretreatments on CVD graphene growth at different stages

First Principles Calculation of Effect of Graphene Coating on Transmission Coefficient of Cu Thin Film with Low Surface Roughness

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

Anisotropic Strain Relaxation of Graphene by Corrugation on Copper Crystal Surfaces.

The effect of copper pretreatment on graphene synthesis by ion implantation into Ni/Cu substrate

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Effect of Copper Surface Roughness on the High-Temperature Structural Stability of Single-Layer-Graphene

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper.

Graphene Nucleation Preferentially at Oxygen-Rich Cu Sites Rather Than on Pure Cu Surface

The role of Cu crystallographic orientations towards growing superclean graphene on meter-sized scale

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

Nanoscale Morphology Of Graphene On Different Substrates

Substrate screening for superclean graphene growth using first-principles calculations

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate