Abstract:The rapid development of nanotechnology makes it possible to further understand nanoscale heat conduction. Theoretical analysis and experimental measurement have demonstrated the size-dependence of thermal conductivity on a nanoscale. As dielectric material (such as silicon), phonons are the predominant carriers of heat transport. Phonon ballistic transport and boundary scattering lead to the significant reduction of thermal conductivity. Various models, in which only one geometrical constraint of phonon transport is considered, have been proposed. In engineering situations the phonon transport can be influenced by multiple geometrical constraints, especially for material with long intrinsic phonon mean free path. However, at present a phonon thermal conductivity model in which the multiple geometrical constraints of phonon transport are taken into account, is still lacking. In the present paper, a multi-constrained phonon thermal conductivity model is obtained by using the phonon Boltzmann transport equation and modifying the phonon mean free path. The geometrical constraints are dealt with separately, and the effects of these constraints on thermal conductivity are then combined by the Matthiessen's rules. Different boundary conditions can lead to different influences on the phonon transport, so different methods should be used for different boundary constraints. The differential approximation method is utilized for the constraint in the direction of heat flux, while phonon scatterings on side surfaces are characterized by modifying the phonon mean free path. The model which characterizes various nanostructures including nanofilms(in-plane and cross-plane) and finite length rectangular nanowires, can well agree with the Monte Carlo simulations of different Knudsen numbers. The model with the Knudsen number Kn(x) equal to 0 can well predict the experimental data for the in-plane thermal conductivity of nanofilm. When the Knudsen numbers Kn(y) and Kn(z) vanish, the model corresponds to the cross-plane thermal conductivity of nanofilm. Moreover, with Kn(x) = 0 and Kn(y) = Kn(z), the model corresponds to the square nanowires of infinite length, and the similar slopes between the model and the experimental data of nanowires can be achieved.

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An Efficient Two-Step Monte Carlo Method for Heat Conduction in Nanostructures

Phonon Ballistic-Diffusive Heat Conduction in Silicon Nanofilms by Monte Carlo Simulations

Cross-plane Heat Conduction in Nanoporous Silicon Thin Films by Phonon Boltzmann Transport Equation and Monte Carlo Simulations

A Hybrid Phonon Monte Carlo-diffusion Method for Ballistic-Diffusive Heat Conduction in Nano- and Micro- Structures

A Unified Phonon Interpretation for the Non-Fourier Heat Conduction by Non-equilibrium Molecular Dynamics Simulations

A Hybrid Monte Carlo-Discrete Ordinates Method for Phonon Transport in Micro/Nanosystems with Rough Interfaces

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Monte Carlo simulations for phonon transport in silicon nanomaterials

A Steady-State Energy-Based Monte Carlo Method for Phonon Transport with Arbitrary Temperature Difference

Ballistic-Diffusive Heat Conduction in Thin Films by Phonon Monte Carlo Method: Gray Medium Approximation Versus Phonon Dispersion

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Interfacial Phonon Transport with Frequency-Dependent Transmissivity by Monte Carlo Simulation

Hydrodynamic Modeling of Heat Conduction in Nanoscale Systems

Transient Monte Carlo simulation of phonon transport in silicon nanofilms with the local heat source

Study of Phononic Thermal Transport Across Nanostructured Interfaces Using Phonon Monte Carlo Method

Thermal conductivity prediction by atomistic simulation methods: Recent advances and detailed comparison

A Model for Phonon Thermal Conductivity of Multi-Constrained Nanostructures

Quantitatively Predicting Modal Thermal Conductivity of Nanocrystalline Si by full band Monte Carlo simulations

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method