Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Monte Carlo Simulation of Interfacial Phonon Transport Through Bilayer Thin Film

Interfacial Phonon Transport with Frequency-Dependent Transmissivity by Monte Carlo Simulation

Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme with Spectral Transmissivity

A Hybrid Monte Carlo-Discrete Ordinates Method for Phonon Transport in Micro/Nanosystems with Rough Interfaces

A Unified Phonon Interpretation for the Non-Fourier Heat Conduction by Non-equilibrium Molecular Dynamics Simulations

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Roughness Dependence of Phonon-Interface Thermal Transport: Theoretical Model and Monte Carlo Simulation

Enhancing interfacial thermal transport by nanostructures: Monte Carlo simulations with ab initio phonon properties

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

In-plane Interfacial Phonon Transport Through Multi-Layer Thin Films by Theoretical Analyses and Monte Carlo Simulations

Full 3-D Monte Carlo Simulation of Coupled Electron-Phonon Transport: Self-Heating in a Nanoscale FinFET

Monte Carlo simulations for phonon transport in silicon nanomaterials

Interface Phonon Transport in Nanomaterials: Numerical Methods and Modulation Strategies

Phonon Ballistic-Diffusive Heat Conduction in Silicon Nanofilms by Monte Carlo Simulations

Efficient Approach for Modeling Phonon Transmission Probability in Nanoscale Interfacial Thermal Transport

Transient In-Plane Thermal Transport in Nanofilms with Internal Heating

Cross-plane Heat Conduction in Nanoporous Silicon Thin Films by Phonon Boltzmann Transport Equation and Monte Carlo Simulations

Study of Phononic Thermal Transport Across Nanostructured Interfaces Using Phonon Monte Carlo Method

Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

Analytical model for thermal boundary conductance based on elastic wave theory

Manipulation of Effective Thermal Conductivity of Multilayer Thin Film by Varying Thickness Ratio of Layers Using Monte Carlo Simulation