Abstract:Zirconium nitride (ZrN) is considered as a candidate for contact metal and barrier layer in ohmic contacts for GaN-based devices for its superior electrical conductivity and corrosion resistance. This paper reported ZrN films deposited on GaN/Si templates using Metal-Organic Chemical Vapor Deposition (MOCVD) for the first time, and analyzed the effect of substrate temperature (Ts) on its growth mode, film stress, as well as electrical properties. Firstly, the surface morphology and film roughness of the resultant ZrN epilayers were investigated, which were found to vary dramatically with Ts. Then, a temperature-dominated crystal formation process is reasonably proposed, revealing the transfer from the island to layer growth mode and the augmentation of the growth rate of ZrN with elevated Ts. Stress information was obtained from the position of XRD diffraction peaks, which indicates large in-plane lattice stretching in ZrN film and the presence of compressive stress in the GaN/Si template. The stress states can be related to island merger and thermal mismatch between ZrN and GaN, which proved satisfyingly advantageous in preventing the GaN layer from breaking during the subsequent preparation procedure. In addition, XPS surface and interface analyses were applied to identify the chemical state as well as the atomic content of the ZrN film, which also indicate a relatively clear interface exists between the ZrN epilayer and GaN/Si template. Furthermore, Hall tests proved the resistivity of ZrN thin film can reach a minimum of 2.28  10-4 ·cm, owing to the grain boundary chaining and flat film surface at high temperatures. Overall, it appears to have a promising prospects for its application in the contact layer and diffusion barrier of ohmic contact in GaN-based devices.

Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD

Influences of nitridation treatment on the properties of semi-polar (11 2 ̅2) plane AlGaN films

Study on the Nitridation of Β-Ga2o3 Films*

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Influence of Nitridation Time on the RF-MBE Growth of InN Films Crystalline Structure

Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment

GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si (1 1 1) Substrates

Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate

Effect of deposition time on tribological and adhesion characteristics of niobium nitride thin films

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

The enhanced GaN deposition on highly N-incorporated diamond substrate

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Nitridation Effect of the Α-Al2o3 Substrates on the Quality of the GaN Films Grown by Pulsed Laser Deposition

Influence of oxygen precursors and annealing on Fe3O4 films grown on GaN templates by metal organic chemical vapor deposition

The role of AlN thickness in MOCVD growth of N-polar GaN

MOCVD Growth of ZrN Thin Films on GaN/Si Templates and the Effect of Substrate Temperature on Growth Mode, Stress State, and Electrical Properties

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition