Abstract:At heterointerfaces between complex oxides with polar discontinuity, the instability-induced electric field may drive electron redistribution, causing a dramatic change in the interfacial charge density. This results in the emergence of a rich diversity of exotic physical phenomena in these quasi-two-dimensional systems, which can be further tuned by an external field. To develop novel multifunctional electronic devices, it is essential to control the growth of polar oxide films and heterointerfaces with atomic precision. In this article, we review recent progress in control techniques for oxide film growth by molecular beam epitaxy (MBE). We emphasize the importance of tuning the microscopic surface structures of polar films for developing precise growth control techniques. Taking the polar SrTiO3 (110) and (111) surfaces as examples, we show that, by keeping the surface reconstructed throughout MBE growth, high-quality layer-by-layer homoepitaxy can be realized. Because the stability of different reconstructions is determined by the surface cation concentration, the growth rate from the Sr/Ti evaporation source can be monitored in real time. A precise, automated control method is established by which insulating homoepitaxial SrTiO3 (110) and (111) films can be obtained on doped metallic substrates. The films show atomically well-defined surfaces and high dielectric performance, which allows the surface carrier concentration to be tuned in the range of ~1013/cm2. By applying the knowledge of microstructures from fundamental surface physics to film growth techniques, new opportunities are provided for material science and related research.

Nanoengineering: Atomic Layer Engineering of Perovskite Oxides for Chemically Sharp Heterointerfaces (Adv. Mater. 48/2012)

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Chemically Specific Termination Control of Oxide Interfaces Via Layer-by-layer Mean Inner Potential Engineering

Atomically Precise Interfaces from Non-Stoichiometric Deposition

Interface Engineering In Epitaxial Growth Of Layered Oxides Via A Conducting Layer Insertion

Complex Oxides Nanocrystals Via Pulsed Laser Ablation

Exposing High-Energy Surfaces by Rapid-Anneal Solid Phase Epitaxy

Adsorption-controlled epitaxy of perovskites

Recent advances in pulsed-laser deposition of complex-oxides

Electrostatic Force–Driven Oxide Heteroepitaxy for Interface Control

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Controlled Growth of Complex Polar Oxide Films with Atomically Precise Molecular Beam Epitaxy

Electrostatic epitaxy of orientational perovskites for microlasers

Reconstruction-Stabilized Epitaxy of LaCoO3/SrTiO3(111) Heterostructures by Pulsed Laser Deposition

Pulsed laser deposition of complex oxide heteroepitaxy

Growth of nanoporous high-entropy oxide thin films by pulsed laser deposition

Engineering of a Charged Incoherent BiFeO3/SrTiO3 Interface

Interface Design Beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-forbidden Interfaces

Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide