Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

Mutsumi Sugiyama,Yoshitsuna Murata,Tsubasa Shimizu,Kottadi Ramya,Chinna Venkataiah,Tomoaki Sato,K. T. Ramakrishna Reddy
DOI: https://doi.org/10.1143/jjap.50.05fh03
IF: 1.5
2011-01-01
Japanese Journal of Applied Physics
Abstract:Tin sulphide is considered to be a potential candidate for the development of low cost polycrystalline thin film solar cells. The advantages of using sulfurization process to grow SnS films were demonstrated. Polycrystalline p-type SnS films were obtained by a simple dry process at 300 °C for 90 min. The sulfurization condition depends on the deposition method of the Sn precursor. Using single-phase SnS films, band discontinuities at SnS/CdS and SnO2/SnS heterointerfaces were measured by X-ray photoelectron spectroscopy. The valence band offsets were determined to be approximately 1.5 eV for SnS/CdS and 3.5 eV for SnO2/SnS interfaces. Using these values and the energy band gaps of the corresponding layers, the energy band diagram was developed. It indicated that the SnS/CdS heterojunction is of TYPE-II form of heterostructure. This result indicated that SnS-related solar cells with CdS as window layer do not have an ideal band structure that could give high conversion efficiency.
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