Correlative Microscopy of Radial Junction Nanowire Solar Cells Using Nanoindent Position Markers
Antonin Fejfar,Matej Hyvl,Aliaksei Vetushka,Peter Pikna,Zdenka Hajkova,Martin Ledinsky,Jan Kocka,Petr Klapetek,Ales Marek,Andrea Maskova,Jiri Vyskocil,Janis Merkel,Christiane Becker,Takashi Itoh,Soumyadeep Misra,Martin Foldyna,Linwei Yu,Pere Roca I Cabarrocas
DOI: https://doi.org/10.1016/j.solmat.2014.10.027
IF: 6.9
2014-01-01
Solar Energy Materials and Solar Cells
Abstract:Radial junction solar cells with only ~100nm thin amorphous Si absorber layer deposited on Si nanowires can be prepared by a relatively simple and low-cost thin film technology. Metal assisted Si nanowire growth leads to a disorder in nanowire orientations, lengths and shapes, which is then preserved by the conformal absorber layer. Interestingly, high conversion efficiencies are reached in spite of the disorder. In this contribution we describe microscopic methods aiming at exploring the role of structural disorder on the local electronic properties of radial junction cells. A method for locating the same nanostructure in different microscopes, using the nanoindentation marks for orientation on the sample, is described. Indents can be easily located by optical microscopy, scanning electron microscopes or scanning probe microscopes. Groups of three indents arranged in triangles can serve as coordinate systems for triangulation on samples, enabling correlative microscopy even in instruments which were not designed for it. This approach also enables localization of the same positions on samples after repeated mounting in various microscopes with a precision better than 50nm. This is possible even on samples without any structural features, as demonstrated for flat silicon thin films prepared by solid phase crystallization, for which we have correlated crystallographic maps from electron backscattering diffraction and conductivity maps by atomic force microscopy. The technique allows observing the same locations before and after technological steps, as shown for the hot wire chemical vapor deposition of carbon nanowalls.