Abstract:Control over the energy level alignment in molecular junctions is notoriously difficult, making it challenging to control basic electronic functions such as the direction of rectification. Therefore, alternative approaches to control electronic functions in molecular junctions are needed. This paper describes switching of the direction of rectification by changing the bottom electrode material M = Ag, Au, or Pt in M-S(CH2)11S-BTTF//EGaIn junctions based on self-assembled monolayers incorporating benzotetrathiafulvalene (BTTF) with EGaIn (eutectic alloy of Ga and In) as the top electrode. The stability of the junctions is determined by the choice of the bottom electrode, which, in turn, determines the maximum applied bias window, and the mechanism of rectification is dominated by the energy levels centered on the BTTF units. The energy level alignments of the three junctions are similar because of Fermi level pinning induced by charge transfer at the metal-thiolate interface and by a varying degree of additional charge transfer between BTTF and the metal. Density functional theory calculations show that the amount of electron transfer from M to the lowest unoccupied molecular orbital (LUMO) of BTTF follows the order Ag > Au > Pt. Junctions with Ag electrodes are the least stable and can only withstand an applied bias of ±1.0 V. As a result, no molecular orbitals can fall in the applied bias window, and the junctions do not rectify. The junction stability increases for M = Au, and the highest occupied molecular orbital (HOMO) dominates charge transport at a positive bias resulting in a positive rectification ratio of 83 at ±1.5 V. The junctions are very stable for M = Pt, but now the LUMO dominates charge transport at a negative bias resulting in a negative rectification ratio of 912 at ±2.5 V. Thus, the limitations of Fermi level pinning can be bypassed by a judicious choice of the bottom electrode material, making it possible to access selectively HOMO- or LUMO-based charge transport and, as shown here, associated reversal of rectification.

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Rectification and Stability of a Single Molecular Diode with Controlled Orientation

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Stereoelectronic Effect-Induced Conductance Switching in Aromatic Chain Single-Molecule Junctions.

Ab Initioinvestigations on the Geometric and Electronic Structures of a Diblock Molecular Diode under the Influence of an External Bias

Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode

Electron Correlation Enhancement of the Diode Property of Asymmetric Molecules

Controlling the Direction of Rectification in a Molecular Diode

Reversible Electric Switching of NDI Molecular Wires by Orthogonal Stimuli.

Protonation effects on electron transport through diblock molecular junctions: A theoretical study

Electric field modulation on the geometric and electric structures of diblock molecular diode

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Zero-Bias Anti-Ohmic Behaviour in Diradicaloid Molecular Wires

Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule-Electrode Interfaces in Redox-Active Tunneling Junctions

Controllable Low-Bias Negative Differential Resistance And Rectifying Behaviors Induced By Symmetry Breaking

Tunable Symmetry-Breaking-Induced Dual Functions in Stable and Photoswitched Single-Molecule Junctions

Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes.

Decode mechanical conductance switching behaviors of dipyridyl molecular junctions

Polarity switching from p- to n-type in a single thermoelectric donor-acceptor copolymer by p-type doping

Ambipolar Transport in an Electrochemically Gated Single-Molecule Field-Effect Transistor.

In Situ Tuning of the Charge-Carrier Polarity in Imidazole-Linked Single-Molecule Junctions