Electron Correlation Enhancement of the Diode Property of Asymmetric Molecules

Yoshihiro Asai,Hisao Nakamura,Joshua Hihath,Christopher Bruot,Nongjian Tao
DOI: https://doi.org/10.1103/physrevb.84.115436
2011-01-01
Abstract:Stimulated by recent experiments for diblock molecular junctions, we investigated a possible mechanism to explain the giant diode property by focusing on the electron correlation effect. Based on our observation that the first-principles generalized gradient approximation (GGA) fails to account for the large rectification behavior at high voltage, we have made nonequilibrium many-body calculations using the extended Hubbard model. Theoretical calculations including the electron correlation effect within the self-consistent GW approximation using Keldysh Green's functions give a large enhancement of the diode property over the mean-field result. We suggest that the many-body electron collision effect confined in one of the diblocks is necessary to explain the large rectification behavior found in experiments.
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