Charge and Ion Transport in NiO and Aspects of Ni Oxidation from First Principles

Jianguo Yu,Kevin M. Rosso,Stephen M. Bruemmer
DOI: https://doi.org/10.1021/jp208080v
2012-01-01
Abstract:Motivated by relevance to Ni metal oxidation, electronic and ionic transport properties of bulk NiO were calculated from first principles with the GGA+U formalism. The calculations suggest that bulk NiO is a p-type oxide with Ni vacancies as the majority defect and hole donating species, consistent with current understanding. Calculated energy barriers for diffusion of interstitial Ni and O and their corresponding vacancy partners show that while generally lower for interstitials, their formation energies are much larger. The small electron polaron (e(-)) in the form of Ni+ was directly computed. Its formation energy is lower than that of a hole small polaron, and its diffusion activation energy is significantly lower than those calculated for the ionic defects. Calculation of the electrical field local to structurally specific heteroepitaxial Ni/NiO interfaces shows that the field strength is lowest for Ni(111)/NiO relative to both Ni(100)/NiO and Ni(110)/NiO, suggesting a low driving force for electron injection into NiO from Ni(111) in general consistency with the highest corrosion resistance observed for this surface.
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