Abstract:The solid/gas eutectic unidirectional solidification process is a new kind of technology fabricating the lotus-type porous structure. Besides having the properties of large specific surface area, excellent sound absorption, penetrating performance etc. of traditional porous materials, the particularity of the lotus-type porous structure makes it has extraordinary mechanical and thermal properties. There is a great potential for lotus-type porous aluminum in the field of lightweight engineering and heat dissipation of chip owing to its low density, outstanding corrosion resistance and high thermal conductivity. However, the fabrication of lotus-type porous aluminum has always been been more difficulty than other metals. Until porous aluminum with excellent pore structure was fabricated under very small solidification rates (0.008 similar to 0.015 mm/s) and high superheat degrees of melt (240 similar to 340 K), the proper processing parameters were recognized to be essential for the coupled growth of solid/gas phases for Al-H-2 system, especially the solidification rate. In this work, a three-dimensional time-dependent model describing the evolution of single pore was established based on the theoretical analysis of mass transfer, gas bubble nucleation, pore growth, interruption and detachment. The morphology of single pore under different solidification rates were simulated during the Gasar process by using the finite difference method for Al-H-2 system. The research reveals: coupled growth of solid/gas phases can be achieved under the solidification rates from 0.15 mm/s to 0.005 mm/s. The average pore diameter which ranges from 100 pm to 1100 pm increases with decreasing the solidification rate. The pore length also increases while the pore aspect ratio is nearly a constant about 40 with decreasing the solidification rate. The simulated average pore diameter is in good agreement with the experimental values when solidification rate equals to 0.015 mm/s, and then being slightly lower than the experimental ones with decreasing the solidification rate. The diffusion of hydrogen into the melt during the solidification process is regarded as the main reason of the discrepancy between simulated and experimental average pore diameters. The maximum value of the simulated solidification rates for coupled growth of solid/gas phases in Al-H-2 system first increases from less than 0.01 mm/s to 0.15 mm/s and then being a constant, while the minimum ones increase from about 0.0001 mm/s to 0.01 mm/s with improving the overheat degree of melt and hydrogen partial pressure. By comparing the relative parameters of Al-H-2 and Cu-H-2 systems, the solubility of hydrogen is regarded to be the main parameter which determines solidification rates of coupled growth of solid/gas phases for Al-H-2 system.

Pore Structure of Unidirectional Solidified Lotus-Type Porous Silicon

Fabrication of Lotus-Type Porous Silicon by Unidirectional Solidification in Pressurized Hydrogen Atmosphere

Effect of Gas Pressure on Pore Distribution of Lotus-Type Porous Magnesium Fabricated by Unidirectional Solidification

Evaluation of Porosity in Lotus-Type Porous Cu Fabricated with Gasar Process

Fabrication of High-Porosity Lotus-Type Porous Aluminum in Vacuum

The Effect of Process Parameters on the Pore Structure of Lotus-Type Porous Copper Fabricated via Continuous Casting

Evaluation of Porosity in Lotus-Type Porous Magnesium Fabricated by Metal/Gas Eutectic Unidirectional Solidification

Geometric Control of Lotus-Type Pore Formation in Solids

PRESSURE CONDITION FOR FORMATION OF LOTUS-TYPE REGULAR POROUS STRUCTURE AND EVOLUTION OF PORE SIZE

Optimizing the Pore Structure of Lotus-Type Porous Copper Fabricated by Continuous Casting

MODELING AND SIMULATION OF STRUCTURAL FORMATION OF POROUS ALUMINUM IN GASAR SOLIDIFICATION

Evolution of Pore Size Distribution and Mean Pore Size in Lotus-Type Porous Magnesium Fabricated with Gasar Process

Fabrication and Pore Structure of Directionally Solidified Porous Mg-Zn Alloy

Parametric Control via the Algebraic Expression of Lotus-Type Pore Shapes in Metals

Fabrication, properties, and applications of porous metals with directional pores

Effect of melt superheat on structural uniformity of lotus-type porous metals prepared by unidirectional solidification

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Interfacial physico-chemical equilibrium control of lotus-type pore formation in solid

The Critical Processing Conditions for Directional Solidification of Solid/Gas Eutectics

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Modeling of the Effects of Processing Parameters on Lotus-Type Porous Mg