Sub-10-nm-resolution Electron-Beam Lithography Toward Very-High-density Multilevel 3D Nano-Magnetic Information Devices

Beomseop Lee,Jeongmin Hong,Nissim Amos,Ilya Dumer,Dmitri Litvinov,Sakhrat Khizroev
DOI: https://doi.org/10.1007/s11051-013-1665-7
IF: 2.533
2013-01-01
Journal of Nanoparticle Research
Abstract:We report a study on the optimization of ultra-high-resolution electron-beam lithography for nanoscale patterning with two separate lift-off processes using positive and negative resists; the optimized method is suitable for the emerging area of nano-magnetoelectronics. If used together, these high-aspect-ratio processes can achieve information cells with a diameter of 9 nm, a square pitch of 26 nm, and an etch depth of at least 50 nm, as required for recording densities greater than 3 Tbit/in(2), provided that 3D integration includes between 2 and 8 independent magnetic bits. Such effective patterning can be used to further develop magnetic bits packed for ultra-high-density disk recording and the emerging field of magnetic tunneling junctions for logic and memory applications.
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