Abstract:The synthesis of transfer-free graphene is necessary for expanding its industrial applications. Although the direct synthesis of graphene on the insulating substrate via a metal sacrificial film was reported, the growth mechanism of transfer-free graphene still remains to be studied. Herein, a detailed synthesis model of graphene grown from different carbon sources has been established to help in selecting the growth conditions for high-quality graphene. A detailed discussion on the critical influence of dissolution and the diffusion rate of carbon atoms on the growth process has also been presented. The high decomposition temperature carbon sources promote the formation of high-quality monolayers of graphene. The carbon diffusion rate of the Cu film is significantly higher than that of Ni. This promotes the synthesis of graphene from methane and diamond-like carbon. However, adverse effects are exerted on polymethyl methacrylate. Ion implantation technology and different components of the Ni–Cu alloy were used to understand this growth mechanism. This work could guide the growth conditions of transfer-free, large-scale, and high-quality graphene that can be potentially used for the fabrication of a semiconductor or an insulation substrate in theory. The reported method can generate interest in the field and increase the industrial applications of graphene-based devices that exhibit rough or patterned surfaces.

Redistribution of Carbon Atoms in Pt Substrate for High Quality Monolayer Graphene Synthesis

Clean Transfer of Graphene on Pt Foils Mediated by a Carbon Monoxide Intercalation Process

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

A Fast Transfer-Free Synthesis Of High-Quality Monolayer Graphene On Insulating Substrates By A Simple Rapid Thermal Treatment

High-quality Monolayer Graphene Synthesis on Pd Foils Via the Suppression of Multilayer Growth at Grain Boundaries.

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Thinning Segregated Graphene Layers on High Carbon Solubility Substrates of Rhodium Foils by Tuning the Quenching Process

Chemical Vapor Deposition Growth of Scalable Monolayer Polycrystalline Graphene Films with Millimeter-Sized Domains

Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Growth and Atomic-Scale Characterizations of Graphene on Multifaceted Textured Pt Foils Prepared by Chemical Vapor Deposition

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Transfer of graphene onto arbitrary substrates via sublimable carrier

A General Synthetic Strategy to Monolayer Graphene

Growth Mechanism of Transfer-Free Graphene Synthesized from Different Carbon Sources and Verified by Ion Implantation

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Effect of Staged Methane Flow on Graphene Quality of Low-Pressure Chemical Vapor Deposition

Synthesis of Multilayer Graphene with Controlled C Supply