Mim Capacitors with Various Al2o3 Thicknesses for Gaas Rfic Application

Zhou Jiahui,Chang Hudong,Liu Honggang,Liu Guiming,Xu Wenjun,Li Qi,Li Simin,He Zhiyi,Li Haiou
DOI: https://doi.org/10.1088/1674-4926/36/5/054004
2015-01-01
Journal of Semiconductors
Abstract:The impact of various thicknesses of Al2O3 metal-insulator-metal(MIM) capacitors on direct current and radio frequency(RF) characteristics is investigated.For 20 nm Al2O3,the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz.An outstanding VCC-α of 74 ppm/V2 at 1 MHz,resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors.High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.
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