Ado-Phosphonic Acid Self-Assembled Monolayer Modified Dielectrics For Organic Thin Film Transistors

li zhefeng,luo xianye
DOI: https://doi.org/10.1088/1674-4926/35/10/104004
2014-01-01
Journal of Semiconductors
Abstract:This study explores a strategy of using the phosphonic acid derivative (11-((12-(anthracen-2-yl) dodecyl) oxy)-11-oxoundecyl) phosphonic acid (ADO-phosphonic acid) as self-assembled monolayers (SAMs) on a Si/SiO2 surface to induce the crystallization of rubrene in vacuum deposited thin film transistors, which showed a field-effect mobility as high as 0.18 cm(2)/(V.s). It is found that ADO-phosphonic acid SAMs play a unique role in modulating the morphology of rubrene to form a crystalline film in the thin-film transistors.
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