Photoluminescence Enhancement of YAG:Ce Nanophosphors with SiO2 Additions

Huajun Wu,Tiecheng Lu,Nian Wei,Zhongwen Lu,Xingtao Chen,Yongbing Guan,Yu Zhao,Jianqi Qi,Qiwu Shi,Xiumin Xie,Wei Zhang
DOI: https://doi.org/10.1007/s10854-015-2705-0
2015-01-01
Journal of Materials Science Materials in Electronics
Abstract:Co-precipitated Y 3 Al 5 O 12 :Ce nanophosphors with enhanced photoluminescence (PL) intensity were synthesized by introducing SiO 2 in the precursor. The role of SiO 2 on morphologies, PL enhancement and valence state of Ce was investigated by varying the amounts of SiO 2 from 0 to 1.0 wt%. The SiO 2 addition inhibited the crystal growth owing to the appearance of second phase. However, the PL intensity of YAG:Ce was largely improved with SiO 2 addition. The reason for the PL enhancement was that the incorporation of Si 4+ into the YAG host suppressed the further oxidation of Ce 3+ to Ce 4+ owing to charge compensation.
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