Microwave dielectric properties of BaY 2 (MoO 4 ) 4 ceramic with low sintering temperature

Wen-Bo Li,Hai-Hong Xi,Di Zhou

DOI: https://doi.org/10.1007/s10854-014-2583-x

2014-01-01

Abstract:A low firing microwave dielectric ceramic BaY 2 (MoO 4 ) 4 with monoclinic phase was prepared by using solid state reaction method. Microstructure and microwave dielectric properties of the ceramic were investigated. Optimized microwave dielectric properties were obtained in the ceramic sintered at 925 °C for 2 h with a relative permittivity ~11.5, a Q × f value about 47,200 GHz (at 10.3 GHz) and a temperature coefficient of resonant frequency of −35 ppm/°C. Furthermore, 0.5BaY 2 (MoO 4 ) 4 –0.5TiO 2 ceramic sintered at 970 °C for 2 h with a relative permittivity ~13.6, a Q × f value about 30,800 GHz (at 9.6 GHz) and a near zero τ f value of +0.8 ppm/°C.