Defect physics of intrinsic point defects in BiPO4 photocatalyst: A hybrid functional study
Hongchun Zheng,Jincheng Wang,Bo Kong,Xiang Xu,Min Zhang,Wentao Wang
DOI: https://doi.org/10.1039/d3cp03636g
IF: 3.3
2023-10-07
Physical Chemistry Chemical Physics
Abstract:In this work, the intrinsic point defect properties of bulk BiPO4 under different growth conditions are intensively investigated and explored using first-principles hybrid functional calculations. It is found that Bi vacancy and O vacancy are the primary native defects in BiPO4. Under O-poor conditions, BiPO4 presents an intrinsic insulator due to the O vacancy defect (donor), and the Bi vacancy defect (acceptor) compensate for each other. While under Bi-poor conditions, a well p-type conductivity character is displayed in BiPO4, which affirms the observed p-type conductivity behavior in experiments. Bi vacancy in BiPO4 is a very shallow and excellent acceptor and is mostly responsible for the p-type character. In addition, it is found that the primary Bi vacancy defect of BiPO4 hardly affects its electronic structure and optical absorption spectrum regardless of the charge states. In contrast, the neutral O vacancy defect in BiPO4 introduces an impurity energy level near the VBM and induces a new optical absorption peak around 370 nm. Further, the O vacancy should be favorable for enhancing the producing and separating efficiencies of the photo-generated electrons and holes in BiPO4. While Bi vacancy easily provides the p-type carriers, simultaneously, it could become the activity site of the photocatalytic reactions because of its dominant -3 charge state. Therefore, understanding the defect physics in BiPO4 photocatalysts is believed to be beneficial for more research in developing BiPO4 or BiPO4-based photocatalysts.
chemistry, physical,physics, atomic, molecular & chemical