Evolution of Anisotropic In-Plane Resistivity with Doping Level in Ca1-Xnaxfe2as2 Single Crystals

J. Q. Ma,X. G. Luo,P. Cheng,N. Zhu,D. Y. Liu,F. Chen,J. J. Ying,A. F. Wang,X. F. Lu,B. Lei,X. H. Chen
DOI: https://doi.org/10.1103/physrevb.89.174512
IF: 3.7
2014-01-01
Physical Review B
Abstract:We measured the in-plane resistivity anisotropy in the underdoped Ca1-xNaxFe2As2 single crystals. The anisotropy (indicated by rho(b) - rho(a)) appears below a temperature well above magnetic transition temperature T-N, being positive (rho(b) - rho(a) > 0) as x <= 0.14. With increasing the doping level to x = 0.19, an intersection between rho(b) and rho(a) is observed upon cooling, with rho(b) - rho(a) < 0 at low temperature deep inside a magnetically ordered state, while rho(b) - rho(a) > 0 at high temperature. Subsequently, further increase of hole concentration leads to a negative anisotropy rho(b) - rho(a) < 0 in the whole temperature range. These results manifest that the anisotropic behavior of resistivity in the magnetically ordered state depends strongly on the competition of the contributions from different mechanisms, and the competition between the two contributions results in a complicated evolution of the anisotropy of in-plane resistivity with doping level.
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