Hydrogen Gas Sensing Properties of MoS2/Si Heterojunction

Yunjie Liu,Lanzhong Hao,Wei Gao,Zhipeng Wu,Yali Lin,Guixia Li,Wenyue Guo,Lianqing Yu,Huizhong Zeng,Jun Zhu,Wanli Zhang
DOI: https://doi.org/10.1016/j.snb.2015.01.129
IF: 9.221
2015-01-01
Sensors and Actuators B Chemical
Abstract:Molybdenum disulfide (MoS2) thin films were deposited on (1 0 0) Si substrates using magnetron sputtering technique and MoS2/Si heterojunctions were fabricated. X-ray diffraction patterns revealed that( 0 0 1) crystal orientation is preferable in the films. Atomic force microscopy illustrated that the surface of the film is composed of dense nano-level grains. The current-voltage characteristics of the heterojunctions were investigated. The results showed that the heterojunctions exhibited obvious sensing properties to hydrogen gas (H-2) at room temperature (RT) when reverse voltages were applied on the heterojunctions. The sensing performance was featured by a high sensitivity, fast response and recovery, as well as good reversibility, and stable steady states. The sensing mechanisms were discussed in terms of the energy-band structure of the MoS2/Si heterojunction. (C) 2015 Elsevier B.V. All rights reserved.
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