Abstract:The electric gating on the transport properties of two-dimensional electron gas (2DEG) at the interface of LaAlO3/SrTiO3 (LAO/STO) heterostructure has attracted great research interest due to its potential application in field-effect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices (SLs) fabricated on the TiO2-terminated (001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.

Electrically induced colossal capacitance enhancement in LaAlO3|[sol]|SrTiO3 heterostructures

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Visible-light-enhanced gating effect at the LaAlO₃/SrTiO₃ interface.

Visible-light-enhanced gating effect at the LaAlO 3 /SrTiO 3 interface

Electro-Mechanical Response of Top-Gated LaAlO3/SrTiO3 Heterostructures

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Electric field control of superconductivity at the LaAlO<sub>3</sub>/KTaO<sub>3</sub>(111) interface

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Electric Field Control Of Superconductivity At The Laalo3/Ktao3(111) Interface

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Tunable Electron-Electron Interactions in LaAlO3/SrTiO3 Nanostructures

Room-Temperature Electronically-Controlled Ferromagnetism at the LaAlO3/SrTiO3 Interface

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO 3 and SrTiO 3

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Electrostatically Tuned Dimensional Crossover in LaAlO3/SrTiO3 Heterostructures

Electric gating of the multichannel conduction in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> superlattices*