Tetraphenyldibenzoperiflanthene As Sensitizer for Enhancing the Performance in Dinaphthothienothiophene-Based Photovoltaics with and Without Fullerene

Yan-qiong Zheng,William J. Potscavage,Jing Zhang,Takuma Yasuda,Bin Wei,Chihaya Adachi
DOI: https://doi.org/10.1016/j.synthmet.2015.04.002
IF: 4
2015-01-01
Synthetic Metals
Abstract:In this work, various interlayers were inserted between the donor and acceptor in a dinaphthothienothiophene (DN'FF)/C-60 planar heterojunction (PHJ) to sensitize the performance. The power conversion efficiency is enhanced from 1.16% for the DNTT/C-60 PHJ cell to 2.23% by inserting a 5-nm-thick tetraphenyldibenzoperifianthene (DBP) interlayer because of the greatly improved photocurrent and open-circuit voltage (Voc). To achieve high Voc, fullerene-free PHJs of DNTT/boron subphthalocyanine chloride (SubPc) (donor/acceptor) were fabricated, and Voc is further improved by doping various fractions of DBP into the SubPc layer. The Voc clearly increases from 0.82V to 1.24V by 70 wt%-DBP doping and is accompanied by a slight increase in photocurrent. The bipolar transfer characteristics of SubPc and DBP are investigated by field-effect transistors and show that both can transport electrons, indicating their potential as acceptors in photovoltaic devices. When another 5-nm-thick SubPc layer was included in the fullerene-free DNTF/SubPc:DBP PHJ cell, the power conversion efficiency further increases to 1.32%. These results indicate that DBP is a promising sensitizer for enhancing the performance of DNIT-based photovoltaics. (C) 2015 Elsevier B.V. All rights reserved.
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