Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors

Changjin Wan,Jumei Zhou,Yi Shi,Qing Wan
DOI: https://doi.org/10.1109/led.2014.2299796
IF: 4.8157
2014-01-01
IEEE Electron Device Letters
Abstract:Classical conditioning, a fundamental property in associative learning, has aroused a wide range of interests in neuromorphic engineering. Here, junctionless indium-zinc-oxide (IZO)-based electric-double-layer transistors gated by nanogranular SiO2 proton conducting electrolyte films are proposed to mimic such behavior. Proton-related electrochemical doping can result in evident oxygen vacancy in IZO channel layer, which is demonstrated by X-ray photoelectron spectroscopy measurements. After such electrochemical forming in half part of the IZO channel, conditioning response can be observed by gate-pulse training process.
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